Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment

Li, Xiaobo; Lin, Feng; Wu, Junye; Zhang, Ziyue; Song, Liang; Pu, Taofei; Li, Xicong; Lin, Xinnan; Lu, Youming; Liu, Xinke

doi:10.1109/ted.2022.3151563

Cited by 4 publications

(3 citation statements)

References 23 publications

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“…Devices with ZTC points in the low‐voltage region are more suitable for integrated circuits. [ 43 ] The number of Au NPs affected the position of the ZTC point (Figure S8, Supporting Information). A higher number of Au NPs brought the ZTC points closer to the subthreshold region.…”

Section: Resultsmentioning

confidence: 99%

Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors

Qi,

Tie,

et al. 2024

Advanced Materials

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Organic field‐effect transistors (OFETs) have broad prospects in biomedical, sensor, and aerospace applications. However, obtaining temperature‐immune OFETs is difficult because the electrical properties of organic semiconductors (OSCs) are temperature‐sensitive. The zero‐temperature coefficient (ZTC) point behavior can be used to achieve a temperature‐immune output current; however, it is difficult to achieve in organic devices with thermal activation characteristics, according to the existing ZTC point theory. Here, we eliminate the Fermi pinning in OSCs using the defect passivation strategy, making the Fermi level closer to the tail state at low temperatures; thus threshold voltage (VT) is negatively correlated with temperature. ZTC‐point behaviors in OFETs are achieved by compensation between VT and mobility at different temperatures to improve its A temperature‐immune output current can be realized in a variable‐temperature bias voltage test over 50000 s by biasing the device at the ZTC point. This study provides an effective solution for temperature‐immune OFETs and inspiration for their practical application.This article is protected by copyright. All rights reserved

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Section: Resultsmentioning

confidence: 99%

Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors

Qi,

Tie,

et al. 2024

Advanced Materials

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“…In addition to the reduced Efield, the presence of oxygen at the metal/p-GaN interface typically results in a higher j B . 37,38) After conducting OCT, the j B increases by 0.27 eV [Fig. 4(b)].…”

Section: = +mentioning

confidence: 99%

Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Wang,

Chen,

Jiang

et al. 2024

Appl. Phys. Express

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Improved p-GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p-GaN surface, leading to an extended depletion region under the same gate bias and thus reducing the electric field. Furthermore, the Schottky barrier height also increases by OCT. Consequently, suppressed gate leakage current and enlarged gate breakdown voltage are achieved. Notably, the maximum applicable gate bias also increases from 4 V to 8.1 V for a 10-year lifetime at a failure rate of 1%.

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“…Gallium nitride (GaN) compound semiconductor has established itself as a promising candidate to develop highperformance power electronic devices due to its wide bandgap, high electron mobility, high critical electric fields, and decent thermal conductivity [1][2][3][4][5][6]. In the past decades, various GaNbased power devices including high-electron-mobility transistors [7,8], p-n junction diodes (PNDs) [9], and Schottky barrier diodes (SBDs) [10], have been intensively studied to meet the demanding requirements in the applications such as consumer electronics, electrical vehicles, 5G communication, radar, etc.…”

Section: Introductionmentioning

confidence: 99%

Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal

Shi¹,

Xiang²,

Zhang³

et al. 2022

Semicond. Sci. Technol.

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In this work, the oxidized metal PtOx was employed as the Schottky contact metal in the fabrication of GaN-on-GaN vertical SBDs. Compared with the GaN SBD with just Pt Schottky anode, the Pt/PtOx/Pt-GaN SBDs exhibited a substantial reduction in reverse leakage current density (J_R ) from 5.2×10−6 A·cm-2 to 5.6×10−9 A·cm-2 (@ -50 V) and a large rise in the breakdown voltage (V_BD) from 152 V to 368 V, as well as maintaining the similar on-state characteristics in terms of turn-on voltage and on resistance. The temperature-dependent current-voltage characteristics of the fabricated devices further revealed that the Pt/PtOx/Pt-GaN SBDs possessed a higher Schottky barrier height and better high-temperature stability. Such an improvement should be attributed to the electric dipole effect in the PtOx layer. Moreover, the additional thin Pt layer between PtOx and GaN almost have no influence on the electric dipole effect of PtOx but can effectively protect the GaN surface from plasma damage and oxidation during the PtOx deposition. We believe that the proposed Pt/PtOx/Pt-GaN Schottky contact scheme provides a straightforward and effective strategy to develop next-generation GaN power electronic devices.

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Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment

Cited by 4 publications

References 23 publications

Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors

Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors

Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal

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