Enhanced performance of solution-processed regioregular poly(3-hexylthiophene) thin-film transistors using planar bottom-contact architecture

Abstract

The authors report on the solution-processed planar bottom-contact (pBC) organic thin-film transistors and contact effect on gate threshold voltage incorporating regioregular poly(3-hexylthiophene) active layer. By employing pBC configuration, the transistors on SiO2∕Si without surface modification show much higher mobility, lower threshold voltage, and narrower dispersion of threshold voltage when compared to the conventional bottom-contact counterparts. The high mobility and lower threshold voltage are attributed to an improved contact at the interface between the source/drain electrodes and the poly(3-hexylthiophene) active layer.

Synthesis of fluorinated polymer gate dielectric with improved wetting property and its application to organic field-effect transistors

“…The mixture was heated up to 70 o C and stirred for 7 h. The mixture was poured to 500 mL of diethyl ether and the precipitate was washed with diethyl ether several times. The final product (2) was gathered and dried in a vacuum oven for 24 h. Figure 1 shows reaction scheme for the preparation of fluorinated styrene monomer (1) and copolymer gate dielectric (2).…”

“…Indium tin oxide (ITO) on a glass substrate was patterned by a conventional lithographic method for a Figure 1. The reaction scheme for the preparation of fluorinated styrene monomer (1) and copolymer gate dielectric, fluorinated styrene-alt-maleic anhydride copolymer (2). The copolymer (2) was prepared by a solution copolymerization.…”

“…In particular, remarkable achievement in the development of organic field-effect transistors (OFETs) has been made for the low-cost, light-weight and flexible organic electronics. [1][2][3][4][5][6] The performance of OFETs has been improved dramatically through intensive and focused research effort, and already reached the level of conventional hydrogenated amorphous silicon transistors. 4,7 Considering that charge transport occurs within a few monolayer of organic semiconductor, surface properties of gate dielectric could affect the growth mechanism of organic semiconductor and performance of OFETs.…”

Ultra-flat coplanar electrodes for controlled electrical contact of molecular films

“…However, fabrication of embedded electrodes with planarity and flatness at the molecular scale is very challenging. In several studies, Xu et al 10,11 created embedded electrodes by first etching a silicon oxide substrate patterned by UV lithography followed by the evaporation of a layer of gold with a thickness equal to the etched material. However, the authors observed that the etch process produced trenches between the electrode and the dielectric.…”

Solution Processed Top‐Gate n‐Channel Transistors and Complementary Circuits on Plastics Operating in Ambient Conditions

“…This result can be explained by the increased contact resistance of the bottomcontact TFTs due to different semiconductor film crystallization/growth on the contact versus dielectric surface generating grain boundaries [14] as well as differences in electrode charge injection area between the two structures. [15] In addition, the transfer plots are independent on the gate bias scan rate, indicating minimal bias stress. Finally, atomic force microscopy (AFM, Fig.…”