Enhanced Performance of Thiophene-Rich Heteroacene, Dibenzothiopheno [6,5-b:6’,5’-f] Thieno[3,2-b]Thiophene Thin-Film Transistor With MoO<sub>x</sub>Hole Injection Layers

Yun, Youngjun; Choi, An-Seop; Hahm, Suk Gyu; Chung, Jong Won; Lee, Yong Uk; Jung, Ji Young; Kim, Joo-Young; Park, Jeong‐Il; Lee, Sang Yoon; Jang, Jaewon

doi:10.1109/led.2017.2687941

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…It is also observable from Table‐2, that the drift mobility of holes (

μ = e τ_{i} / m^{*}

) which exhibits value of 5.56 and 6.64 cm 2 V −1 s −1 for MoO 3 and CuSe, respectively, increases to 7.76 cm 2 V −1 s −1 upon the two materials interfacing. The value of the drift mobility is consistent with the value reported as 7.0 cm 2 V −1 s −1 for the highly performing thin‐film transistors made of thermally evaporated amorphous MoO x . These transistors are reported to exhibit linear and saturation regimes as well as an ON/OFF current ratio of 10 7 .…”

Section: Resultssupporting

confidence: 86%

Structural and Optoelectronic Properties of MoO₃/CuSe Interfaces

Alharbi

Qasrawi

2019

Physica Status Solidi (a)

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In this article, the authors discuss the growth nature, the structural, optical and dielectric properties of CuSe thin films deposited onto MoO 3 substrate. The films are studied by the X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and ultraviolet-visible light spectroscopy techniques. CuSe thin films are observed to exhibit strained nature of growth when grown onto MoO 3 amorphous substrates. Optically, the MoO 3 /CuSe films are found to exhibit conduction (ΔE c ) and valence (ΔE v ) band offsets of values of 3.70 and 3.42 eV, respectively. In addition, a remarkable increase in the absorbability (R λ ) of MoO 3 by 72 times at 3.0 eV is obtained as a result of coating it with CuSe. The ΔE c , ΔE v , and R λ values are significantly high and nominate the MoO 3 /CuSe interfaces for use in many optoelectronic applications. In addition, the dielectric analysis shows that the MoO 3 /CuSe heterojunction exhibit optical conductivity parameters that make it suitable for use in optical communications. Particularly, the Drude-Lorentz modeling of the imaginary part of the dielectric constant for the MoO 3 /CuSe interfaces displays mobility and plasmon frequency values of 7.76 cm 2 V À1 s À1 and 3.78 GHz, respectively. The obtained plasmon frequency values indicate the applicability of this device in microwave technology.

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“…It is also observable from Table‐2, that the drift mobility of holes (

μ = e τ_{i} / m^{*}

Section: Resultssupporting

confidence: 86%

Structural and Optoelectronic Properties of MoO₃/CuSe Interfaces

Alharbi

Qasrawi

2019

Physica Status Solidi (a)

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“…In order to understand the improvement in contact resistance of these devices, the electronic structures of C 8 -BTBT and various interfaces were investigated. The MoO 3 and WO 3 are well known transition metal oxides and widely used as interlayer between the metal electrode and organic layer in organic photovoltaic devices 22,23 . Electron affinity (EA), ionization energy (IE) and work function of transition metal oxides can be precisely measured using photoemission spectroscopy and thus very deep lying energy levels of these oxides were confirmed 24,25 .…”

Section: Resultsmentioning

confidence: 99%

Role of Oxide/Metal Bilayer Electrodes in Solution Processed Organic Field Effect Transistors

Ablat

Kyndiah

Houin

et al. 2019

Sci Rep

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High performance, air stable and solution-processed small molecule 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C 8 -BTBT) based organic field-effect transistors (OFETs) with various electrode configurations were studied in detail. The contact resistance of OFET devices with Ag, Au, WO 3 /Ag, MoO 3 /Ag, WO 3 /Au, and MoO 3 /Au were compared. Reduced contact resistance and consequently improved performance were observed in OFET devices with oxide interlayers compared to the devices with bare metal electrodes. The best oxide/metal combination was determined. The possible mechanisms for enhanced electrical properties were explained by favorable morphological and electronic structure of organic/metal oxide/metal interfaces.

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“…The IDS-VDS curves are probed at gate voltages of −30, −20, −10, 0, 10, 20, and 30 V. In the low VDS region of the curves, IDS changes non-linearly with VDS. This resulted from the relatively high work function of Au, compared with that of SnO2, and the consequent Schottky contact between the SnO2 channel and the Au source/drain electrodes [18][19][20]. The negative output differential resistance effect observed in Figure 3b was induced by the large gate leakage current.…”

Section: Resultsmentioning

confidence: 98%

Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

Lee

Bae

et al. 2019

Electronics

Self Cite

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The effect of annealing ambient on SnO 2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO 2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO 2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm 2 /Vs, 0.87 V/decade, and 10 7 , respectively.

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Enhanced Performance of Thiophene-Rich Heteroacene, Dibenzothiopheno [6,5-b:6’,5’-f] Thieno[3,2-b]Thiophene Thin-Film Transistor With MoO_xHole Injection Layers

Cited by 6 publications

References 16 publications

Structural and Optoelectronic Properties of MoO₃/CuSe Interfaces

Structural and Optoelectronic Properties of MoO₃/CuSe Interfaces

Role of Oxide/Metal Bilayer Electrodes in Solution Processed Organic Field Effect Transistors

Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

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Enhanced Performance of Thiophene-Rich Heteroacene, Dibenzothiopheno [6,5-b:6’,5’-f] Thieno[3,2-b]Thiophene Thin-Film Transistor With MoOxHole Injection Layers

Cited by 6 publications

References 16 publications

Structural and Optoelectronic Properties of MoO3/CuSe Interfaces

Structural and Optoelectronic Properties of MoO3/CuSe Interfaces

Role of Oxide/Metal Bilayer Electrodes in Solution Processed Organic Field Effect Transistors

Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

Contact Info

Product

Resources

About

Enhanced Performance of Thiophene-Rich Heteroacene, Dibenzothiopheno [6,5-b:6’,5’-f] Thieno[3,2-b]Thiophene Thin-Film Transistor With MoO_xHole Injection Layers

Structural and Optoelectronic Properties of MoO₃/CuSe Interfaces

Structural and Optoelectronic Properties of MoO₃/CuSe Interfaces