(006)-, (104)-and (012)-oriented ¡-Al 2 O 3 films in a single phase were prepared by laser chemical vapor deposition (LCVD) using a diode laser. The effects of laser power (P L ), deposition temperature (T dep ) and total pressure (P tot ) on the crystal phase, orientation, microstructure and deposition rate (R dep ) were investigated. The orientation of ¡-Al 2 O 3 films changed from (006) to (104) to (012) with increasing P L . Higher oriented films were deposited at a lower P tot . The microstructure of ¡-Al 2 O 3 films changed from a cauliflower-like structure to a hexagonal faceted structure to a pyramid-like structure with increasing P L . The R dep of oriented ¡-Al 2 O 3 films slightly increased from 30 to 40¯m·h ¹1 with decreasing P L , which was about 50 times greater than that of conventional thermal CVD.