Enhanced photoelectric performance of Cu_2−xSe nanostructure by doping with In³⁺

Abstract

In 3+ doped Cu 2Àx Se nanostructures have been successfully synthesized on a flexible carboxyl functionalized multi-walled carbon nanotubes/polyimide (COOH-MWCNTs/PI) membrane substrate by an electrochemical codeposition method. In this work, the focus was on the effect of different In 3+ doping concentrations upon the morphological, structural, optical and photoelectrical properties of Cu 2Àx Se. Two different kinds of nanostructures, nanoflowers and nanolayers, were obtained. The crystallinity of Cu 2Àx Se was improved by doping with In 3+ . The atomic ratio of Cu, Se in Cu 2Àx Se nanolayers is about 1.85 : 1.00, and the atomic % of In is 1.32, confirming the presence of indium. The optical absorption intensity increased with an increase in the doping content of indium ions. However, In 3+ had no effect upon the band gap and absorption edge. The effect of In 3+ dopant on the photoelectric properties was investigated by photocurrent-time and current-voltage (I-V) measurements, which demonstrated that the photoelectric properties of Cu 2Àx Se were improved by doping with In 3+ . This result is significant for the fabrication of optoelectronic nanomaterials and photodetectors based on In 3+ -doped Cu 2Àx Se nanoflowers and nanolayers.

Thermoelectric Properties of Indium(III)‐Doped Copper Antimony Selenide Thin Films Deposited Using a Microwave‐Assisted Technique

“…The possible growth mechanism was also given. In III was selected as a dopant because it is one of the most important elements to enhance the optoelectronic and thermoelectric performances of chalcopyrite and non‐chalcopyrite compounds . To the best of our knowledge, there has been no report of In III ‐doped Cu 3 SbSe 4 thin films prepared by the microwave‐assisted technique to date.…”

“…In III wass elected as ad opant because it is one of the most important elements to enhance the optoelectronic and thermoelectric performances of chalcopyrite and nonchalcopyrite compounds. [33][34][35][36] To the best of our knowledge, there has been no report of In III -doped Cu 3 SbSe 4 thin films prepared by the microwave-assisted technique to date.A ll these characteristics of nanocrystalline thin films have been studied to investigate the suitability of the material for thermoelectric applications. (5)].…”

Electrodeposition of Cu2Se Semiconductor Thin Film on Se-Modified Polycrystalline Au Electrode

“…Copper (I) selenide (Cu 2 Se) has attracted much attention because of its optoelectronic properties and a wide range of possible applications in solar cells, gas sensors, superionic conductors, and thermoelectric converters. [1][2][3] This material is a p-type semiconductor with a direct band gap of ~2.2 eV and is an intermediate or precursor for the preparation of the ternary compound semiconductor CuInSe 2 (CIS) ---an attractive photovoltaic material because of its high absorption coefficient and stability. 4,5) Thus Cu 2 Se has been synthesized using a wide range of methods, including hot injection, 1,6) solvothermal synthesis, 7) chemical vapor deposition, 8) and electrodeposition.…”

Template based precursor route for the synthesis of CuInSe2 nanorod arrays for potential solar cell applications

“…Selenourea was used as a Se source analogous to thiourea in our previous investigation. The facile precursor method provides many benefits over currently used selenization techniques [10–12], or the impregnation of a third metal cation into a binary selenide compound [4,13]. Firstly, it achieves mixing at the atomic level by forming a solid ‘green body’, in which the elements are present in the correct stoichiometry [14].…”