Enhanced photoelectrochemical performance of ZnO electrodes sensitized with N-719

Kakiuchi, Keita; Hosono, Eiji; Fujihara, Shinobu

doi:10.1016/j.jphotochem.2005.07.018

Cited by 206 publications

(128 citation statements)

References 13 publications

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“…Photoelectrochemical (PEC) systems based on transition metal oxides, such as TiO 2 , zinc oxides (ZnO), and WO 3 , have received extensive attention since the discovery of photo-induced decomposition of water on TiO 2 electrodes [1][2][3][4][5][6][7][8][9]. The drawback of PEC systems using these metal oxides is that they have large bandgaps and cannot efficiently absorb visible light, which is the major fraction of the solar spectrum.…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

et al. 2010

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Ga-N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N 2 and O 2 gas ambient. We found that Ga-N co-doped ZnO films exhibited enhanced crystallinity when compared to undoped ZnO films grown under the same conditions. Furthermore, Ga-N co-doping ensured enhanced N-incorporation ZnO thin films as the substrate temperature is increased. As a result, Ga-N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive codoping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation.

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Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

et al. 2010

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“…Kakiuchi et al reported a g value of 4.6% under 14 mW cm −2 for a DSSC based on a 20 lm thick ZnO/N-719 photoanode. 5 The low FF values reported here might be a consequence of the high series resistance losses arising from the poor adhesion between the ZnO:Ga nanoparticles and the TCO substrate. The IPCE curves of the DSSCs based on ZnO and ZnO:Ga resemble the absorption spectrum of the ruthenium dye (Fig.…”

Section: Resultsmentioning

confidence: 82%

“…Dye loading was determined according to a published procedure. 5 The dye was desorbed from the porous film by using a 1 mol L −1 NaOH solution (water-ethanol 1 : 1 volume ratio) and then analyzed in a UV-Vis Shimadzu UV-2500PC spectrophotometer according to the absorbance data of N-719 standard solutions.…”

Section: Methodsmentioning

confidence: 99%

“…Among their wide range of applications, ZnO films have potential to be applied as an alternative material for nanostructured electrodes in photoelectrochemical solar cells. 5 The DSSCs based on ZnO have their solar conversion efficiencies limited, in part, by the formation of Zn 2+ /dye aggregates during the dye loading process depending on the dye composition, concentration and sensitization time. 6 As reported earlier, the electron injection is decreased by the presence of aggregates on the surface of ZnO films.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and characterization of ZnO and ZnO:Ga films and their application in dye-sensitized solar cells

et al. 2008

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Highly crystalline ZnO and Ga-modified zinc oxide (ZnO:Ga) nanoparticles containing 1, 3 and 5 atom% of Ga 3+ were prepared by precipitation method at low temperature. The films were characterized by XRD, BET, XPS and SEM. No evidence of zinc gallate formation (ZnGa 2 O 4 ), even in the samples containing 5 atom% of gallium, was detected by XRD. XPS data revealed that Ga is present into the ZnO matrix as Ga 3+ , according to the characteristic binding energies. The particle size decreased as the gallium level was increased as observed by SEM, which might be related to a faster hydrolysis reaction rate. The smaller particle size provided films with higher porosity and surface area, enabling a higher dye loading. When these films were applied to dye-sensitized solar cells (DSSCs) as photoelectrodes, the device based on ZnO:Ga 5 atom% presented an overall conversion efficiency of 6% (at 10 mW cm −2 ), a three-fold increase compared to the ZnO-based DSSCs under the same conditions. To our knowledge, this is one of the highest efficiencies reported so far for ZnO-based DSSCs. Transient absorption (TAS) study of the photoinduced dynamics of dye-sensitized ZnO:Ga films showed that the higher the gallium content, the higher the amount of dye cation formed, while no significant change on the recombination dynamics was observed. The study indicates that Ga-modification of nanocrystalline ZnO leads to an improvement of photocurrent and overall efficiency in the corresponding device.

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“…ZnO has been intensively studied since 1935 (Bunn, 1935) and the theory of semiconductors got a firm start. The interest in ZnO is fueled and fanned by its direct wide band gap (E g ~ 3.3 eV at 300 K), (Kakiuchi et al, 2006). ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO base devices.…”

Section: Introductionmentioning

confidence: 99%

Greener Solvent-Free Reactions on ZnO

Hosseini‐Sarvari¹

2012

Green Chemistry - Environmentally Benign Approaches

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Enhanced photoelectrochemical performance of ZnO electrodes sensitized with N-719

Cited by 206 publications

References 13 publications

Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

Synthesis and characterization of ZnO and ZnO:Ga films and their application in dye-sensitized solar cells

Greener Solvent-Free Reactions on ZnO

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