Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer

Jiang, Quanzhong; Lewins, Christopher J.; Allsopp, D.W.E.; Bowen, Chris R.; Wang, Wang N.; Satka, A.; Priesol, J.; Uherek, Frantisek

doi:10.7567/jjap.52.061002

Cited by 2 publications

(6 citation statements)

References 32 publications

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“…24 Jiang et al showed that GaN tends to grow in 3D mode on a non-annealed AlN interlayer, but in 2D mode on an annealed AlN interlayer. 26 In addition to the thickness of the AlN interlayer and the post-growth annealing thermal treatment, the AlN interlayer growth temperature is also one of the most important parameters that affects the structural properties of the AlN interlayer. However, the precise role of the AlN interlayer growth temperature on the 3D GaN growth and the quality of GaN epitaxial films is still unknown.…”

Section: Introductionmentioning

confidence: 99%

A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates

et al. 2016

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The quality of GaN epitaxial films on Si substrates is significantly improved by employing a lowtemperature AlN interlayer. The relationship between the AlN interlayer growth temperature and the quality of GaN epitaxial films is systematically investigated. As the AlN interlayer growth temperature increases from 700 to 1000 °C, the crystalline quality of the GaN epitaxial films is firstly improved and then deteriorated. The GaN epitaxial film with the AlN interlayer grown at 800 °C shows the best crystalline quality, which is characterized by X-ray rocking curves with minimum full-width at half-maximum values of 370 and 452 arcsec for GaN (0002) and GaN (10-12), respectively. Further investigation reveals the fact that the low growth temperature of the AlN interlayer weakens the diffusion of Ga atoms from the AlGaN buffer layer into the AlN interlayer, thereby maintaining the lattice mismatch between the AlN interlayer and the GaN layer. The lattice mismatch facilitates the growth of 3-dimensional GaN which reduces the dislocation density effectively. This work provides a significant insight into the growth mechanism of GaN epitaxial films on Si substrates, which is critical for the fabrication of GaN-based devices on Si substrates.

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Section: Introductionmentioning

confidence: 99%

A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates

et al. 2016

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“…On the other hand, the Raman spectra of sample 1 are further away from the dashed line in comparison with those of sample 2. Therefore, sample 1 has a high level of tensile stress and it is not surprising that cracks have been observed [9]. In summary, this approach provides a better characterization method compared to conventional Raman spectroscopy by comparing figures 6 and 7 with figure 5.…”

Section: Raman Spectra With Positionmentioning

confidence: 92%

“…The structures were also treated with SiH 4 to reduce the dislocation density. For sample 1, extensive three dimensional (3D) GaN island growth on the LT AlN interlayer was demonstrated for the reduction of dislocations [9]. The Si dopant concentration is estimated to be ∼5-7 × 10 +18 cm −3 in Si:GaN layers.…”

Section: Methodsmentioning

confidence: 99%

“…Despite samples 1 and 2 having the same Si dopant concentrations and sample 1 exhibiting a reduced dislocation density [9], the higher level of tensile stress in sample 1 (figures 6 and 7), as well as its smaller wafer convex curvature at the Si:GaN growth temperature, cannot be explained solely in terms of dislocation inclinations induced by Si doping. Therefore, the compressive stress in the 3D GaN islands, which were grown on an LT AlN interlayer may have undergone stress relaxation [9,20], resulting in a low compressive stress in the Si:GaN layer during MOCVD growth.…”

Section: Photo-luminescence Spectra With Positionmentioning

confidence: 95%

“…The as-grown samples were initially examined after growth via scanning electronic microscopy. Sample 1 had a low crack density but sample 2 was crack-free apart from at the substrate edge [9]. X-ray characterization and investigation of the dislocation reduction in these samples will be reported elsewhere [9].…”

Section: Methodsmentioning

confidence: 99%

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The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates

Jiang

Allsopp

Bowen

et al. 2013

Semicond. Sci. Technol.

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The tensile stress in light-emitting diode (LED)-on-Si(1 1 1) multilayer structures must be reduced so that it does not compromise the multiple quantum well emission wavelength uniformity and structural stability. In this paper it is shown for non-optimized LED structures grown on Si(1 1 1) substrates that both emission wavelength uniformity and structural stability can be achieved within the same growth process. In order to gain a deeper understanding of the stress distribution within such a structure, cross-sectional Raman and photo-luminescence spectroscopy techniques were developed. It is observed that for a Si:GaN layer grown on a low-temperature (LT) AlN intermediate layer there is a decrease in compressive stress with increasing Si:GaN layer thickness during MOCVD growth which leads to a high level of tensile stress in the upper part of the layer. This may lead to the development of cracks during cooling to room temperature. Such a phenomenon may be associated with annihilation of defects such as dislocations. Therefore, a reduction of dislocation intensity should take place at the early stage of GaN growth on an AlN or AlGaN layer in order to reduce a build up of tensile stress with thickness. Furthermore, it is also shown that a prolonged three dimensional GaN island growth on a LT AlN interlayer for the reduction of dislocations may result in a reduction in the compressive stress in the resulting GaN layer.

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Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer

Cited by 2 publications

References 32 publications

A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates

A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates

The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates

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