2017
DOI: 10.1126/sciadv.1701293
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Enhanced photovoltaic performance and stability with a new type of hollow 3D perovskite {en}FASnI 3

Abstract: High-performance and good-stability hollow Sn-based perovskite solar cells using ethylenediammonium and formamidinium cations.

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Cited by 366 publications
(446 citation statements)
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“…A bulk recombination process includes both bimolecular recombination and trap-assisted recombination (Shockley-Reed-Hall recombination). [15,19,40,53] In our case, the use of DMF/DMSO solvent and HI additive in the precursor is critical for fabrication of high-performance 3AMP-based perovskite solar cells. A trap-free electron and hole transport and bimolecular recombination should have a slope of δV oc = kT/q.…”
Section: Resultsmentioning
confidence: 99%
“…A bulk recombination process includes both bimolecular recombination and trap-assisted recombination (Shockley-Reed-Hall recombination). [15,19,40,53] In our case, the use of DMF/DMSO solvent and HI additive in the precursor is critical for fabrication of high-performance 3AMP-based perovskite solar cells. A trap-free electron and hole transport and bimolecular recombination should have a slope of δV oc = kT/q.…”
Section: Resultsmentioning
confidence: 99%
“…Firstly, ethylenediammonium(en) cations were incorporated into FASnI 3 ,62 MASnI 3 and CsSnI 3 ,55 and then form so‐called “hollow” {en}ASnI 3 perovskite. For the sake of incorparation of appropriate amount of en cations, the 3D structure of perovskite is retained while perovskite film morphology is significantly improved.…”
Section: Discussionmentioning
confidence: 99%
“…[2][3][4][5] Theoretical calculations indicate that the perovskite crystal structure is preserved after metal cation substitution. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] Rapid oxidation of Sn 2+ to Sn 4+ in ambient atmosphere dopes the perovskite layer into high conductivity,r esulting in severe electrical shunting. [2][3][4][5][6][7] Unfortunately,p ower conversion efficiencies (PCEs) obtained from Sn-based PSCs are much lower than that of their Pb counterpart.…”
mentioning
confidence: 99%
“…[6] As the most promising candidate among Pb-free perovskites,t in halide perovskites show suitable band gaps and advantageous optoelectronic properties. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] Rapid oxidation of Sn 2+ to Sn 4+ in ambient atmosphere dopes the perovskite layer into high conductivity,r esulting in severe electrical shunting. Though aS n-based PSC using MASnI 3 as the absorber was first demonstrated in 2014 with ar eported power conversion efficiencyo ver 5%, [8,9] theh ighest PCE achieved for aS n-based PSC to date is still below 10 %.…”
mentioning
confidence: 99%