Enhanced piezoelectric and imprint characteristics of in situ sputtered Ta-doped Pb(Zr,Ti)O 3 thin films on Ir/TiW/SiO 2 /Si substrates

Han, Chan Su; Park, Kyu Sik; Choi, Hong Je; Cho, Yong Soo

doi:10.1016/j.jallcom.2017.05.288

Cited by 9 publications

(5 citation statements)

References 32 publications

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“…The Ni nanodots seem to be uniformly distributed regardless of the nanodot size. The existence of external magnetic field during the consolidation process of Ni is assumed to induce the uniform distribution of Ni nanodots on the surface since the magnetic field itself is externally uniform . Surface SEM images of Ir/TiW deposited onto the Ni nanodots are additionally seen in Figure S2 in the Supporting Information, which demonstrates well‐packed rough surface of the electrode layer.…”

Section: Resultsmentioning

confidence: 99%

“…Here, we introduce a technical way to improve piezoelectric properties of Nb‐doped PZT thin films by intentionally fabricating Ni nanodot‐array on a Si substrate with the assistance of uniform magnetic field upon deposition. Specifically, heavily 12 mol% Nb doping was selected for the sputtering process since the heavy doping has been recently reported to uniquely produce the in situ domain formation during deposition when combined exclusively with the Ir/TiW bottom electrode . Interestingly, the relatively high content of 12 mol% Nb is all dissolved into the perovskite structure without segregation.…”

Section: Introductionmentioning

confidence: 99%

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Large Local‐Compressive Stress‐Induced Improvements in Piezoelectric Characteristics of Lead Zirconate Titanate Thin Films on a Ni Nanodots Array

Han

Cho

Kim

et al. 2018

Adv Elect Materials

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Interfacial stress present in ferroelectric thin films is known to affect largely their piezoelectric properties by modifying crystal orientation and domain structure. Here, a nonconventional way is proposed to substantially improve the polarization and piezoelectric characteristics of Pb(Zr,Ti)O3 thin films by modifying the surface of the typical Si substrate into an embossed structure with Ni nanodots. Uniform Ni nanodot arrays are successfully produced by an external magnetic field through the consolidation process of thin Ni layer. The exceptionally large thermal expansion mismatch of ≈94% between the thin films and the Ni nanodots is believed to induce a large local‐compressive stress around the nanodot region and thus the intensified orientation toward c‐axis. For this demonstration, the in situ sputtering processing enabled by combining heavily 12 mol% Nb‐doping with a bottom electrode structure of Ir/TiW is used. As a highlight of the improvement, a significant increase of ≈33% in effective piezoelectric coefficient is observed for the 90 nm Ni nanodot case. An apparent shift of the polarization–electric field curve suggests the existence of internal field, as an evidence of the in situ domain formation.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Large Local‐Compressive Stress‐Induced Improvements in Piezoelectric Characteristics of Lead Zirconate Titanate Thin Films on a Ni Nanodots Array

Han

Cho

Kim

et al. 2018

Adv Elect Materials

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“…This phenomenon is found in almost all forms of ferroelectric materials including thin films, 752−758 single crystals, 759 and bulk samples. 481,582,760−762 Material systems include Pb-based, 755,761,763 BaTiO 3 , 481,760,762 KNN, 764 BiFeO 3 , 582,756 (BiNa)TiO 3 (BNT), 765 and so on. In addition, the works concerning the ferroelectricity optimization in aliovalently doped HfO 2 systems have been discussed in Section 4.2.2.…”

Section: Ferroelectricity Tuningmentioning

confidence: 99%

Defects and Aliovalent Doping Engineering in Electroceramics

et al. 2020

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Since the positive influences of defects on the performance of electroceramics were discovered, investigations concerning on defects and aliovalent doping routes have grown rapidly in the fields of inorganic chemistry and condensed matter physics. In this article, we summarized the types of defects in electroceramics as well as characterization tools of defects and highlighted the effects of intrinsic and extrinsic defects on the material performances with the emphasis on dielectric, ferroelectric, and piezoelectric properties. We mainly introduced defect related theoretical simulation and experimental results in several typical incipient ferroelectrics, ferroelectrics, and antiferroelectrics. Hence, the influences of defects on the crystal lattice were summed up, and then the main physical mechanisms were highlighted. Particularly, the performance enhancements of aliovalently doped electroceramics were also evaluated and reviewed. Finally, the outlook and challenges were discussed on the basis of their current developments. This article covers not only an overview of the state-of-the-art advances of defects and aliovalent doping routes in electroceramics but also the future prospects that may open another window to tune the electrical performance of electroceramics via intentionally introducing certain defects.

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“…Piezoelectric materials containing lead zirconate titanate [Pb (Zr, Ti)O 3 ] have been widely applied in numerous fields because of their superior piezoelectric coefficients. [1][2][3][4] However, due to the lead oxide pollution in the environment, alternative lead-free piezoelectric materials with high performance are urgently needed. Consequently, exploration of high-performance lead-free piezoelectric materials has continued to increase in recent years.…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate material to the properties of screen-printed lead free (Bi_0.5Na_0.5)TiO₃-based thick films

Liu

Karaki

Fujii

et al. 2020

Jpn. J. Appl. Phys.

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Lead-free piezoelectric 0.83(Bi0.5Na0.5)TiO3-0.17BaTiO3 (BNT-17BT) thick films were grown on MgO ceramic substrates via screen printing. Thick films with compressive stress formed a c-domain preferentially with a volume fraction of 0.88. High-temperature X-ray diffraction and piezoresponse force microscopy and the temperature dependence of the piezoelectric coefficient d33 data indicated that the thick films had a preferred c-domain during the transformation from the tetragonal phase to the cubic phase with temperature increasing. Based on polycrystalline MgO substrates with high thermal expansion coefficients, the thick films displayed a higher phase transition temperature and larger remanent polarization (Pr) values over 220 °C than those of thick films on Al2O3 substrates. The ferroelectric properties of BNT-17BT/MgO were better than those of soft PZT/YSZ and hard PZT/YSZ over 220 °C. The results showed the possibility of applying BNT-17BT thick films in a wide temperature range.

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Enhanced piezoelectric and imprint characteristics of in situ sputtered Ta-doped Pb(Zr,Ti)O 3 thin films on Ir/TiW/SiO 2 /Si substrates

Cited by 9 publications

References 32 publications

Large Local‐Compressive Stress‐Induced Improvements in Piezoelectric Characteristics of Lead Zirconate Titanate Thin Films on a Ni Nanodots Array

Large Local‐Compressive Stress‐Induced Improvements in Piezoelectric Characteristics of Lead Zirconate Titanate Thin Films on a Ni Nanodots Array

Defects and Aliovalent Doping Engineering in Electroceramics

Effect of substrate material to the properties of screen-printed lead free (Bi_0.5Na_0.5)TiO₃-based thick films

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Enhanced piezoelectric and imprint characteristics of in situ sputtered Ta-doped Pb(Zr,Ti)O 3 thin films on Ir/TiW/SiO 2 /Si substrates

Cited by 9 publications

References 32 publications

Large Local‐Compressive Stress‐Induced Improvements in Piezoelectric Characteristics of Lead Zirconate Titanate Thin Films on a Ni Nanodots Array

Large Local‐Compressive Stress‐Induced Improvements in Piezoelectric Characteristics of Lead Zirconate Titanate Thin Films on a Ni Nanodots Array

Defects and Aliovalent Doping Engineering in Electroceramics

Effect of substrate material to the properties of screen-printed lead free (Bi0.5Na0.5)TiO3-based thick films

Contact Info

Product

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Effect of substrate material to the properties of screen-printed lead free (Bi_0.5Na_0.5)TiO₃-based thick films