Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films

Fischeneder, M.; Bittner, A.; Schneider, Michael; Schmid, U.

doi:10.1088/2053-1591/aac9db

Cited by 2 publications

(1 citation statement)

References 21 publications

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“…Aluminum nitride (AlN) films exhibit excellent properties such as, high thermal conductivity (320 W m −1 ·K −1 ), high breakdown strength (14 MV cm −1 ) and thermal expansion coefficient similar to Si [1][2][3]. These special properties of AlN films have great potential in optical, electronic and mechanical fields [4,5].…”

Section: Introductionmentioning

confidence: 99%

Effects of target current density on the ionization rate of deposited particles and breakdown strength of AlN films

Liu¹,

Li²,

Jiang³

2020

Mater. Res. Express

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Aluminum nitride (AlN) films were deposited by DC reactive magnetron sputtering using two high purity aluminum targets, at selected target current densities (0.055, 0.083, 0.110 and 0.138 A cm −2 ). The effects of the target current density on the ionization rate of Al atoms, morphology, chemical composition, crystal structure and breakdown strength of AlN films were studied by self-made device, SEM, XPS, XRD and withstanding voltage tester. It was found that the ionization rate of Al atoms gradually increased from 6% to 19% as target current density increased to 0.138 A cm −2 . The results of XPS showed that the Al/N atomic ratio of AlN films gradually approached 1:1. Compared with low target current densities, the AlN films deposited at 0.110 and 0.138 A cm −2 exhibited a fine-crystal structure with average grain size<15 nm, good columnar structure with no obvious voids, and high breakdown strength. This indicated that Al atoms with high ionization rate could be applied to improve the insulation performance of AlN films. Experimental sectionDeposition of AlN films on P-type (100) Si and 6061 aluminum alloy substrates was carried out by DC reactive magnetron sputtering, in which two Al (Φ 120 mm×H 8 mm, 99.9%) targets placed oppositely. The substrates were placed at 80 mm from the Al targets, and the target discharge area was 36 cm 2 . The films deposition process lasted for 210 min at room temperature. The first 20 min was the etching and cleaning of Al targets and the OPEN ACCESS RECEIVED

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