Enhanced Rashba spin-orbit coupling in core-shell nanowires by the interfacial effect

Wójcik, P.; Bertoni, Alberto; Goldoni, Guido

doi:10.1063/1.5082602

Cited by 18 publications

(12 citation statements)

References 57 publications

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“…In contrast, the material interfaces and the external potential in Ge-based devices can induce inversion asymmetry and, consequently, a spin-orbit interaction at the level of the envelope wave functions 37 . Effects of interface-induced inversion asymmetry on the spin-orbit interaction of electrons and holes have already been studied in detail for a variety of systems [58][59][60][61][62][63][64][65][66][67][68] .…”

Section: Spin-orbit Interaction and G-factorsmentioning

confidence: 99%

The germanium quantum information route

et al. 2020

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Section: Spin-orbit Interaction and G-factorsmentioning

confidence: 99%

The germanium quantum information route

et al. 2020

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“…Furthermore, it is important to note that we focused here on SOI which originates from bulk and structure inversion asymmetry [22]. Additional contributions to the SOI can arise from interface inversion asymmetry [22,[85][86][87][88][89][90][91][92][93][94][95]. It would therefore be very interesting to analyze these contributions for various NWs and interfaces and combine them with our results.…”

Section: Discussionmentioning

confidence: 91%

“…For purely wurtzite GaAs/AlGaAs core/shell NWs, for instance, interface-induced SOI was found to be of high relevance [94]. Recent calculations for InAs/InAsP core/shell NWs suggest that interface-related contributions to the SOI will also be important for many zinc-blende NW heterostructures [95].…”

Section: Discussionmentioning

confidence: 99%

Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

Carballido,

Kloeffel,

Zumbühl

et al. 2019

Preprint

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We study theoretically the spin-orbit interaction of low-energy electrons in semiconducting nanowires with a zinc-blende lattice. The effective Dresselhaus term is derived for various growth directions, including 11 2oriented nanowires. While a specific configuration exists where the Dresselhaus spin-orbit coupling is suppressed even at confinement potentials of low symmetry, many configurations allow for a strong Dresselhaus coupling. In particular, we discuss qualitative and quantitative results for nanowire cross-sections modeled after sectors of rings or circles. The parameter dependence is analyzed in detail, enabling predictions for a large variety of setups. For example, we gain insight into the spin-orbit coupling in recently fabricated GaAs-InAs nanomembrane-nanowire structures. By combining the effective Dresselhaus and Rashba terms, we find that such structures are promising platforms for applications where an electrically controllable spin-orbit interaction is needed. If the nanowire cross-section is scaled down and InAs replaced by InSb, remarkably high Dresselhaus-based spin-orbit energies of the order of millielectronvolt are expected. A Rashba term that is similar to the effective Dresselhaus term can be induced via electric gates, providing means to switch the spin-orbit interaction on and off. By varying the central angle of the circular sector, we find, among other things, that particularly strong Dresselhaus couplings are possible when nanowire cross-sections resemble half-disks.

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“…Multi-band k • p descriptions, which include spin-orbit coupling arising from valence states are crucial to describe, e.g., optical properties [28,29], have been employed for several classes of materials, taking into account composition modulations, crystallographic details and mesoscopic symmetries [30][31][32][33][34][35][36]. Spin-orbit coupling in the conduction band has been evaluated, also in presence of strong magnetic fields [37][38][39]. However, a full description of the band structure of doped CSNWs in the different doping regimes including the self-consistent field arising from the free charge is still missing.…”

Section: Introductionmentioning

confidence: 99%

Band structure of n- and p-doped core-shell nanowires

Vezzosi,

Bertoni,

Goldoni

2022

Preprint

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We investigate the electronic band structure of modulation-doped GaAs/AlGaAs core-shell nanowires for both n-and p-doping. We developed an 8-band Burt-Foreman k • p Hamiltonian approach to describe coupled conduction and valence bands in heterostructured nanowires of arbitrary composition, growth directions, and doping. Coulomb interactions with the electron/hole gas are taken into account within a mean-field self-consistent approach. We map the ensuing multiband envelope function and Poisson equations to optimized, non-uniform real-space grids by the finite element method. Self-consistent charge density, single-particle subbands, density of states and absorption spectra are obtained at different doping regimes. For n-doped samples, the large restructuring of the electron gas for increasing doping results in the formation of quasi-1D electron channels at the core/shell interface. Strong heavy-hole/light-hole coupling of hole state leads to non parabolic dispersions with mass inversion, similarly to planar structures, which persist at large dopings, giving rise to direct LH and indirect HH gaps. In p-doped samples the hole gas forms an almost isotropic, ring-like cloud for a large range of doping. Here, as a result of the increasing localization, HH and LH states uncouple, and mass inversion takes place at a threshold density. Similar evolution is obtained at fixed doping as a function of temperature. We show that signatures of the evolution of band structure can be singled out in the anisotropy of linearly polarized optical absorption.

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Enhanced Rashba spin-orbit coupling in core-shell nanowires by the interfacial effect

Cited by 18 publications

References 57 publications

The germanium quantum information route

The germanium quantum information route

Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

Band structure of n- and p-doped core-shell nanowires

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