Enhanced Red Emission of Eu,O-Codoped 
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 Embedded in a Photonic Crystal Nanocavity with Hexagonal Air Holes

Ichikawa, Shuhei; Sasaki, Yutaka; Iwaya, Takenori; Murakami, Masato; Ashida, Masaaki; Timmerman, Dolf; Tatebayashi, J.; Fujiwara, Yoshihiro

doi:10.1103/physrevapplied.15.034086

Cited by 13 publications

(14 citation statements)

References 47 publications

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“…The rare earth (RE) doping technique in wide bandgap semiconductors has exhibited significant potential for achieving color-tunable LEDs due to their stable emission wavelength with narrow line widths originating from the 4f intrashell transitions in RE ions. Ichikawa et al have achieved red LEDs based on Eu doped GaN stackable with the ordinary InGaN LEDs and have realized the successful integration of full-color LEDs. − Increasing the bandgap value of host materials is a well-known approach to enhance the luminescence efficiency of RE dopant emissions. Additionally, it has been observed that the temperature quenching effects exhibit an inverse relationship with the bandgap value of the host material. , Gallium oxide (Ga 2 O 3 ), which exhibits a significantly larger bandgap (4.9 eV) compared to GaN, is expected to be an excellent host material.…”

Section: Introductionmentioning

confidence: 99%

Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films

Guo

Saito

Tanaka

2023

ACS Appl. Electron. Mater.

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Color-tunable light-emitting diodes (LEDs) offer a broad spectrum of applications, encompassing augmented and virtual reality displays, indoor lighting, and architectural lighting. Achieving high efficiency and brightness, stable emission, and fullcolor emission is highly desirable in color-tunable LEDs. However, conventional mass transfer processes have made realizing this technology challenging, because they require extracting red, green, and blue LED chips from different epitaxial wafers. In this spotlight article, we review the progress made toward achieving color-tunable LEDs based on rare earth doped wide bandgap Ga 2 O 3 semiconductors. We have systematically studied the structural and optical characteristics of rare earth (Eu, Er, and Tm) doped Ga 2 O 3 films grown by pulsed laser deposition and observed strong emissions in the red, green, and blue spectral regions from Eu, Er, and Tm doped Ga 2 O 3 films, respectively. We have demonstrated the development of red, green, and blue LEDs based on these Eu, Er, and Tm doped Ga 2 O 3 films and achieved color-tunable LEDs using Eu, Er, and Tm codoped Ga 2 O 3 films. These results demonstrate the great potential of rare earth doped Ga 2 O 3 films for use in color-tunable LED applications.

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Section: Introductionmentioning

confidence: 99%

Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films

Guo

Saito

Tanaka

2023

ACS Appl. Electron. Mater.

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“…Recently, we have fabricated an L7-type 2D-PhC cavity patterned by hexagonal air-holes, and the cavity mode coupled to red emission from a Eu,O-codoped GaN (GaN:Eu,O) active layer. 8) Furthermore, we have demonstrated that hexagonal airholes with flat sidewalls can be easily fabricated on III-nitrides due to the crystallographically stable {1100} planes. 8) However, it is difficult to realize equilateral hexagonal shapes, giving rise to variations of the centroid position of air-holes, which results in structural disorder.…”

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confidence: 95%

“…8) Furthermore, we have demonstrated that hexagonal airholes with flat sidewalls can be easily fabricated on III-nitrides due to the crystallographically stable {1100} planes. 8) However, it is difficult to realize equilateral hexagonal shapes, giving rise to variations of the centroid position of air-holes, which results in structural disorder. Such disorder introduced into a 2D-PhC cavity induces scattering 12) and localization 13,14) of light and a drastic degradation of the Q-factor.…”

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confidence: 95%

“…However, for III-nitrides, fabricated airholes have a tendency to become hexagonal during the wetetching process used to remove the sacrificial layer, because of the low-symmetry wurtzite crystal structure. [5][6][7][8][9] Cl-based reactive ion etching also transforms circular air-holes into rounded hexagons. 10) Therefore, fabrication of accurate circular holes is highly challenging for III-nitrides, especially for applications in the visible range where fabrication of small air-holes is required.…”

mentioning

confidence: 99%

“…For these reasons, Q-factors of III-nitride-based 2D-PhC cavities are relatively low, specifically in the visible region (up to ∼5500). [6][7][8][15][16][17][18][19][20][21][22] It is well-known that other losses related to surface scattering, absorption, etc also decrease Q-factors, 22,23) Triviño et al experimentally and theoretically analyze IIInitride-based 2D-PhC cavities in the infrared regime and suggest that structural disorder is the main loss limiting experimental Q-factors for L3 cavities. 9) Therefore, in this report, we focus on the cavity design by considering tolerance to structural disorder based on simulations.…”

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confidence: 99%

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Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder

Iwaya

Ichikawa

Murakami

et al. 2021

Appl. Phys. Express

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We present a study on the improvement of quality factors (Q-factors) of III-nitride-based two-dimensional photonic crystal (2D-PhC) nanocavities. Although III-nitride-based 2D-PhC cavities have been studied for long time, they typically show relatively low experimental Q-factors due to disorders inevitably introduced during the fabrication processes. In order to realize high-Q-factors, it is necessary to introduce cavities that are tolerant to disorder. We numerically reproduce the experimental found disorder in simulations, and discuss the influence of disorder on Q-factors of several types of cavities. We demonstrate the suitability of these cavities for the realization of high-Q-factors, and show which structures have the largest tolerance for disorders.

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Etching Characteristics of Hydrogen Environment Anisotropic Thermal Etching for GaN‐Based Functional Photonic Devices

Honda,

Akimoto,

Kurabe

et al. 2024

Physica Status Solidi (a)

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InGaN/GaN‐based group‐III nitride semiconductors are the most promising candidate materials for highly functional active photonic devices in the visible region. Low‐damage nanoscale high‐precision etching with vertical facets is important for realizing photonic crystal (PhC) and optically integrated devices. Herein, the etching characteristics of GaN nanoholes using the hydrogen environment anisotropic thermal etching (HEATE) method, which is based on the hydrogen‐assisted thermal decomposition of GaN, are systematically demonstrated. It is found that high‐precision and vertical nanofabrication is possible at high etching temperature (≈1000 °C) and low hydrogen pressure conditions (<18 Pa). In GaN‐based visible topological PhCs composed of fine triangular nanoholes fabricated under these conditions, the photonic bands are observed to be in good agreement with the three‐dimensional finite‐difference time‐domain simulations, indicating the effectiveness of the HEATE method.

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Enhanced Red Emission of Eu,O-Codoped GaN Embedded in a Photonic Crystal Nanocavity with Hexagonal Air Holes

Cited by 13 publications

References 47 publications

Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films

Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films

Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder

Etching Characteristics of Hydrogen Environment Anisotropic Thermal Etching for GaN‐Based Functional Photonic Devices

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