Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments

Romanjuk, B.M.; Kladko, V. P.; Melnik, V.; Popov, V.; Yukhymchuk, Volodymyr; Gudymenko, A. I.; Olikh, Ya. М.; Weidner, G.; Krüger, D.

doi:10.1016/j.mssp.2004.09.030

Cited by 10 publications

(8 citation statements)

References 2 publications

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“…Â îñòàíí³é ÷àñ âñå á³ëüøà óâàãà ñïðÿìîâóºòüñÿ íà äîñë³äaeåííÿ âçàºìîä³¿ óëü-òðàçâóêó (ÓÇ) òà äåôåêòíî¿ ï³äñèñòåìè íàï³â-ïðîâ³äíèêà [1][2][3][4]. Òàê, íàïðèêëàä, âèÿâëåíî, ùî â àêóñòè÷íîìó ïîë³ ñïîñòåð³ãàºòüñÿ äèôóç³ÿ òî÷êîâèõ äåôåêò³â [1], ï³ä ä³ºþ ÓÇ â³äáóâàºòü-ñÿ â³äïàë ðàä³àö³éíèõ äåôåêò³â [2,3].…”

Section: âñòóïunclassified

“…Òàê, íàïðèêëàä, âèÿâëåíî, ùî â àêóñòè÷íîìó ïîë³ ñïîñòåð³ãàºòüñÿ äèôóç³ÿ òî÷êîâèõ äåôåêò³â [1], ï³ä ä³ºþ ÓÇ â³äáóâàºòü-ñÿ â³äïàë ðàä³àö³éíèõ äåôåêò³â [2,3]. Â òîé aeå ÷àñ ïåðåâàaeíà á³ëüø³ñòü îïóáë³êîâàíèõ ðîá³ò ïðèñâÿ÷åíà çì³íàì ó âëàñòèâîñòÿõ íàï³âïðî-â³äíèê³â ï³ñëÿ ÓÇ îáðîáêè, òîä³ ÿê äîñòàòíüî ö³êàâèìè [4] òà ìàëîâèâ÷åíèìè çàëèøàþòüñÿ ïðîöåñè, ÿê³ â³äáóâàþòüñÿ ï³ä ÷àñ ïîøèðåííÿ ÓÇ õâèë³. Â ö³é ðîáîò³ íàâåäåí³ ðåçóëüòàòè âè-â÷åííÿ äèíàì³÷íîãî (in situ) ÓÇ íà ðîáî÷³ ïàðà-ìåòðè êðåìí³ºâèõ ñîíÿ÷íèõ åëåìåíò³â.…”

Section: âñòóïunclassified

See 1 more Smart Citation

Optical Properties of Double-Layer Structure Phthalocyanine–tetracyanoquinodimethane

Kazantseva

Bortchagovsky

Koshets

2007

SEMST

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Àíîòàö³ÿÏðîâåäåíå åêñïåðèìåíòàëüíå äîñë³äaeåííÿ äèíàì³÷íîãî âïëèâó óëüòðàçâóêó íà ñòðóì êî-ðîòêîãî çàìèêàííÿ, íàïðóãó õîëîñòîãî õîäó, ìàêñèìàëüíó âèõ³äíó ïîòóaeí³ñòü òà øóíòóþ-÷èé îï³ð êðåìí³ºâîãî ñîíÿ÷íîãî åëåìåíòó. Â ðîáîò³ âèêîðèñòîâóâàâñÿ çâóê ìåãàãåðöîâîãî ä³àïàçîíó ³íòåíñèâí³ñòþ äî 3 Âò/ñì 2 . Âèÿâëåíî, ùî àêóñòîñòèìóëüîâàí³ çì³íè äîñë³äaeåíèõ ïàðàìåòð³â íåë³í³éíî çàëåaeàòü â³ä ³íòåíñèâíîñò³ ââåäåíîãî óëüòðàçâóêó ³ ìîaeóòü äîñÿãàòè äåñÿòê³â â³äñîòê³â. Ïðîâåäåíî àíàë³ç îòðèìàíèõ ðåçóëüòàò³â ó ïðèïóùåíí³, ùî ïåðåâàaeàþ-÷èì ìåõàí³çìîì ïåðåíåñåííÿ íîñ³¿â ÷åðåç åíåðãåòè÷íèé áàð'ºð º òóíåëüíèé.Êëþ÷îâ³ ñëîâà: Àêóñòî-äåôåêòíà âçàºìîä³ÿ, äèíàì³÷í³ óëüòðàçâóêîâ³ åôåêòè, êðåìí³é, ñî-íÿ÷íèé åëåìåíò. Abstract THE SILICON SOLAR CELL OPERATION UNDER MHz ACOUSTIC LOADING CONDITIONS O. Ya. Olikh, R. M. Burbelo, M. K. HindersThe experimental investigation of dynamic MHz ultrasound effect on short current, open circuit voltage, maximal output power and shunting resistance of silicon solar cells have been carried out. The ultrasound intensity is up to 3 W/cm 2 . It is revealed that acousto-induced variations of measured parameters depend non-linearly on applied ultrasound intensity and may reach dozens of percents. The analysis of observed effects has been done in an assumption that tunnelling is the prevailing mechanism of carriers drift through the energy barrier.

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Section: âñòóïunclassified

Optical Properties of Double-Layer Structure Phthalocyanine–tetracyanoquinodimethane

Kazantseva

Bortchagovsky

Koshets

2007

SEMST

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“…Recombination parameters of the photosensitive Si material, as well as Si solar cells (SCs), have been studied earlier at a lot of various laboratories, in particular, with the use of photovoltage spectroscopy [1][2][3][4][5][6][7][8][9][10][11]. In modern SCs with front-side barriers, the surface recombination is reduced, owing to its screening by heavily doped thin layers, which form a recombination barrier for photo-induced charge carriers.…”

Section: Introductionmentioning

confidence: 99%

Photovoltage Spectroscopy Research of Solar Silicon Recombination Parameters

Литовченко

2015

Ukr. J. Phys.

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Fundamental recombination parameters of a photosensitive solar silicon material have been studied using the surface photovoltage spectroscopy. The method proposed is analyzed on the basis of photosensitive silicon structures of four types: industrial photosensitive Si wafers with the chemically etched (real) surface, structures with the implanted recombination-active Fe + impurity, SiO2-Si structures with the surface-induced inversion channel, and structures with the diffused-junction. A comparison with the formulas obtained for the spectra of direct, SC, and inverse, 1/ SC, photovoltages in terms of the absorption coefficient and its reciprocal quantity 1/ is carried out. The surface and bulk recombination rates and the distributions of recombination-active impurities, structural technological impurities, and defects in the near-surface charge region of solar silicon are calculated.

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“…Recent time much attention is paid to the study of ultrasound influence on the defect structure and electrophysical properties of semiconductor structures [1][2][3][4][5][6][7][8]. In particular, it is revealed, that the broadering of a solar cell (SC) spectral sensitivity range [2], low-temperature annealing of radiating defects [3][4][5] and passivation of grain boundary defects [6] can be realized by the intensification of the defects diffusion and restructuring in a ultrasound field.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, it is revealed, that the broadering of a solar cell (SC) spectral sensitivity range [2], low-temperature annealing of radiating defects [3][4][5] and passivation of grain boundary defects [6] can be realized by the intensification of the defects diffusion and restructuring in a ultrasound field. At the same time processes which occur in material under the acousto-induced nonequilibrium conditions are not clear till now and attract enhanced interest of researchers [7,8]. For instance, investigation of changes of the characteristics of semiconductor devices, caused by the ultrasound treatment, may create preconditions for development of a new class of devices dynamically controlled by an "active" sound.…”

Section: Introductionmentioning

confidence: 99%

The Dynamic Ultrasound Influence on the Diffusion and Drift of the Charge Carriers in Silicon p-n Structures

2007

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Study of the current-voltage (I-V) characteristics of silicon solar cells, treated by MHz ultrasound with intensity up to 3 W/cm 2 have been carried out. It is revealed that under such nonequilibrium conditions, the minority carriers' diffusion process changes, which leads to the increase of the photocurrent (up to 15 %). An acoustostimulated reduction (down to 40 %) of the saturation current of the p-n junction is also observed. It is determined, that the observed changes depend nonlinearly on ultrasound power density, and the efficiency of the ultrasound influence increases with the vibration frequency. We consider that the ultrasound induced effects are connected with nonequilibrium processes of ionization and reorientation of structural defects in the acoustic field.

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Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments

Cited by 10 publications

References 2 publications

Optical Properties of Double-Layer Structure Phthalocyanine–tetracyanoquinodimethane

Optical Properties of Double-Layer Structure Phthalocyanine–tetracyanoquinodimethane

Photovoltage Spectroscopy Research of Solar Silicon Recombination Parameters

The Dynamic Ultrasound Influence on the Diffusion and Drift of the Charge Carriers in Silicon p-n Structures

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