Enhanced resistive switching effect upon illumination in self-assembled NiWO₄nano-nests

Abstract

The resistive switching effect of devices with metal-oxide-metal structure is a fascinating candidate for next generation nonvolatile memory devices. Here, self-assembled NiWO4 nano-nests on a Ti substrate were synthesized by a hydrothermal process. Moreover, a resistive switching memory device with Ag/NiWO4/Ti structure is demonstrated. The device shows an enhanced bipolar resistive switching effect under white-light illumination. This study is useful for exploring multifunctional materials and their applications in light-controlled nonvolatile memory devices.

Synchrotron-based far-infrared spectroscopy of nickel tungstate

“…Recent interests on NiWO 4 have been stimulated by its applications as a catalyst [9,10], in supercapacitors [10,11] and light-controlled bipolar resistive switching devices [12] as well as by numerous possibilities to produce it in nanostructured form [13][14][15][16][17][18][19][20].…”

Bowl-shaped superstructures of CdSe nanocrystals with the narrow-sized distribution for a high-performance photoswitch

“…The white-light illumination modulates the switching behavior by a large number of photogenerated charges. Therefore, the switching effect is controlled by white light with various densities [37,38]. The dark current and photocurrent curves near zero bias demonstrate the existence of photovoltaic effect [39].…”

Photo-electron double regulated resistive switching memory behaviors of Ag/CuWO4/FTO device

“…The mechanisms for resistive switching in metal/oxides/metal structure have been extensively investigated but still controversial [27][28][29]. It is generally believed that the electrically driven migration of the oxygen ions/vacancies plays a critical role in the operation of these devices [30,31].…”