Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS₂/TiO₂ Bilayer

Design and synthesis of a solution-processed redox-active bis(formazanate) zinc complex for resistive switching applications

“…This region is known as the ohmic ( I ∝ V ) region. The slope values of ∼1.3, ∼1.4, and ∼2.4 define the space charge limited conduction (SCLC) mechanism indicating that the traps are completely filled, 67 as also explained by DFT in the theoretical discussion earlier in the paper. Similarly, in the RESET state, the device follows the SCLC mechanism at a higher voltage, as clearly indicated by a slope of ∼1.8.…”

Strategic review of gas sensing enhancement ways of 2D tungsten disulfide/selenide-based chemiresistive sensors: decoration and composite

“…[49][50][51][52][53][54] Following large-scale growth and tuning of structural characteristics, these materials' unique adaptabilities have led to a variety of uses in the elds of optoelectronic devices, electromechanical capabilities, etc. 26,[55][56][57][58] In particular, there have been several scientic investigations over the course of decades showing the wide variety of chemical, electronic, mechanical, thermal, and optical characteristics shown by TMDCs. [59][60][61][62] These 2D materials are among the top picks for future-generation gas-sensing devices because of their versatile electrical features, high responsiveness, exibility, and low energy consumption.…”

Flexible resistive memory device with egg-albumen/HfO x hybrid bilayer: fabrication and modeling of its switching variations

“…Hybrid bilayer indicates a bilayer combination of thin layers of two different types of materials utilised in the formation of the switching layer [20]. It can include combination of any two from inorganic/metal oxides, 2D materials, organic/natural polymers, blends, and many others materials [13,[21][22][23]. In terms of RS mechanism, the term 'hybrid' can even refer to a device in which both active metal ion and oxygen vacancy migration play role in switching [24].…”

“…However, a low endurance (limited to 50 cycles) remained a challenge in pristine albumen based flexible RRAM devices [38,39]. Hybrid bilayer configuration of switching layer with ultra-thin HfO x , offers a possible solution of this limitation [21,22,40]. The introduction of HfO x layer induces two types of filaments, one composed of metal ion and other of oxygen vacancies, in the device.…”