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In this paper, firstly, some recently explored materials and processes for resistive random access memory (ReRAM) devices with bipolar switching mechanism along with their performance parameters are discussed. Further, resistive switching behaviour of TiOx/graphene oxide:PVP based bilayer in ReRAM devices is demonstrated. It is found that bipolar resistive switching behaviour is significantly enhanced due to embedding of 2D material such as graphene oxide in the organic polymer. ReRAM devices with Ag/PVP:GO/TiOx/FTO structure exhibited high ON/OFF current ratio (>103), low voltage operation, and high retention time. Bipolar resistive switching from these engineered active layers will have great potential for future large area and sustainable electronics.

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