Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices

Saini, Shalu; Dwivedi, Anurag; Lodhi, Anil; Khandelwal, Arpit; Tiwari, Shree Prakash

doi:10.1016/j.memori.2023.100029

Cited by 19 publications

(6 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This study also emphasizes the low power operation due to the capability of being operated at very low values of compliance currents for RRAM operation, which is rarely reported. 14,63 Memory device operating mechanism…”

Section: Dalton Transactions Papermentioning

confidence: 99%

“…12 Moreover, for large-area applications such as for flexible electronics, thin layers of these inorganic metal oxides are used in combination with a soft/organic solutionprocessed material to enhance the large-area applicability and electro-mechanical stability. 13,14 This opens a plethora of opportunities for exploration of solution-processed, organic, or polymer materials to be used in bilayers.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Design and synthesis of a solution-processed redox-active bis(formazanate) zinc complex for resistive switching applications

Birara,

Saini,

Majumder

et al. 2023

Dalton Trans.

Self Cite

View full text Add to dashboard Cite

show abstract

Section: Dalton Transactions Papermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and synthesis of a solution-processed redox-active bis(formazanate) zinc complex for resistive switching applications

Birara,

Saini,

Majumder

et al. 2023

Dalton Trans.

Self Cite

View full text Add to dashboard Cite

show abstract

“…To showcase high-performance RRAM devices, there have been reports of nanocompositebased MoS 2 RRAM devices using materials such as poly(4-vinylphenol) [23], reduced graphene oxide (rGO) [24], and polymethylmethacrylate (PMMA) [25]. It is worth noting that these RRAM devices were fabricated on substrates such as indium tin oxide (ITO) coated glass and polyethylene naphthalate (PEN).…”

Section: Nanomaterials For Switching Channel Layermentioning

confidence: 99%

Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays

Jang,

Kwon

2023

Electronics

View full text Add to dashboard Cite

Resistive random-access memory has emerged as a promising non-volatile memory technology, receiving substantial attention due to its potential for high operational performance, low power consumption, temperature robustness, and scalability. Two-dimensional nanostructured materials play a pivotal role in RRAM devices, offering enhanced electrical properties and physical attributes, which contribute to overall device improvement. In this study, the self-rectifying switching behavior in RRAM devices is analyzed based on molybdenum disulfide nanocomposites decorated with Pd on SiO2/Si substrates. The switching layer integration of Pd and MoS2 at the nanoscale effectively mitigates leakage currents decreasing from cross-talk in the RRAM array, eliminating the need for a separate selector device. The successful demonstration of the expected RRAM switching operation and low switching dispersion follows the application of a Pd nanoparticle embedding method. The switching channel layer is presented as an independent (Pd nanoparticle coating and MoS2 nanosheet) nanocomposite. The switching layer length (4000 μm) and width (7000 μm) play an important role in a lateral-conductive-filament-based RRAM device. Through the bipolar switching behavior extraction of RRAM, the formation of the conductive bridges via electronic migration is explained. The fabricated Pd-MoS2 synaptic RRAM device results in a high resistive current ratio for a forward/reverse current higher than 60 at a low resistance state and observes a memory on/off ratio of 103, exhibiting stable resistance switching behavior.

show abstract

“…Also, as in the active layer, PVP has not shown multilevel states and high ON/OFF ratio even though it has a hybrid structure of organic/inorganic materials. [29,30] Considering the biodegradable properties of magnesium metal and its favorable electrochemical characteristics, it has shown the potential to reduce the SET/RESET voltage in RRAM. [31] Herein, we effectively utilized the chemical, electrochemical, and biocompatibility properties of PVP and magnesium metal to enable multilevel RESET-SET operations in the device.…”

Section: Introductionmentioning

confidence: 99%

Multilevel Reset Dependent Set of a Biodegradable Memristor with Physically Transient

Shaikh,

Nguyen,

Jeon

et al. 2023

Advanced Science

View full text Add to dashboard Cite

The electronic device, with its biocompatibility, biodegradability, and ease of fabrication process, shows great potential to embed into health monitoring and hardware data security systems. Herein, polyvinylpyrrolidone (PVP) biopolymer is presented as an active layer, electrochemically active magnesium (Mg) as a metal electrode, and chitosan‐based substrate (CHS) to fabricate biocompatible and biodegradable physically transient neuromorphic device (W/Mg/PVP/Mg/CHS). The I–V curve of device is non‐volatile bipolar in nature and shows a unique compliance‐induced multilevel RESET‐dependent‐SET behavior while sweeping the compliance current from a few microamperes to milliamperes. Non‐volatile and stable switching properties are demonstrated with a long endurance test (100 sweeps) and retention time of over 104 s. The physically transient memristor (PTM) has remarkably high dynamic RON/ROFF (ON/OFF state resistance) ratio (106 Ω), and when placed in deionized (DI) water, the device is observed to completely dissolve within 10 min. The pulse transient measurements demonstrate the neuromorphic computation capabilities of the device in the form of excitatory post synaptic current (EPSC), potentiation, depression, and learning behavior, which resemble the biological function of neurons. The results demonstrate the potential of W/Mg/PVP/Mg/CHS device for use in future healthcare and physically transient electronics.

show abstract

Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices

Cited by 19 publications

References 32 publications

Design and synthesis of a solution-processed redox-active bis(formazanate) zinc complex for resistive switching applications

Design and synthesis of a solution-processed redox-active bis(formazanate) zinc complex for resistive switching applications

Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays

Multilevel Reset Dependent Set of a Biodegradable Memristor with Physically Transient

Contact Info

Product

Resources

About