Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method

Qi, Yanyuan; Zhao, Chun; Zhao, Ce Zhou; Xu, Wangying; Shen, Zongjie; He, Jiahuan; Zhao, Tianshi; Fang, Yuxiao; Liu, Qihan; Yi, Ruowei; Yang, Li

doi:10.1016/j.sse.2019.05.007

Cited by 9 publications

(7 citation statements)

References 37 publications

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“…The uniformity and narrowness of the resistance distribution are key metrics for stability and quality of RRAM devices. A narrow resistance distribution is considered to be a good demonstration of the stability and performance of devices [7,48,49,50]. In this work, the narrowest resistance distribution of Al/Ni/solution-based AlO x /Pt RRAM devices is found for the 250 °C annealing temperature, which therefore presents the best uniformity of the devices.…”

Section: Resultsmentioning

confidence: 83%

“…Figure 5b shows a schematic representation of this process consisting of ON and OFF states, which is considered as the switching mechanism of these devices. The formation and rupture process of CF is associated with the distribution of oxygen ions and oxygen vacancies in the TE and RS layer [22,48,57,58,59]. Figure 5b(i) shows the initial state of RRAM devices without applied voltage, indicating oxygen atoms present in the AlO x thin film.…”

Section: Resultsmentioning

confidence: 99%

“…This formation process of CF consisting of oxygen vacancies in the AlO x thin film is considered to be responsible for the resistance state transition (HRS to LRS) of RRAM devices at the ON state, as depicted in Figure 5b [48,58,60]. Conversely, in the RESET operation, with a negative voltage applied to TE, oxygen ions stored in the electrode drift back to the AlO x thin film under the influence of the negative electrical field and therefore reduce the density of oxygen vacancies in the AlO x thin film [48,63]. This action dominates the rupture process of CF [15,22,48] and the RRAM devices perform at the OFF state (LRS to HRS).…”

Section: Resultsmentioning

confidence: 99%

“…Conversely, in the RESET operation, with a negative voltage applied to TE, oxygen ions stored in the electrode drift back to the AlO x thin film under the influence of the negative electrical field and therefore reduce the density of oxygen vacancies in the AlO x thin film [48,63]. This action dominates the rupture process of CF [15,22,48] and the RRAM devices perform at the OFF state (LRS to HRS).…”

Section: Resultsmentioning

confidence: 99%

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Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Shen

Mitrović

et al. 2019

Micromachines

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Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (<1.5 V), the highest ON/OFF ratio (>104), the narrowest resistance distribution, the longest retention time (>104 s) and the most endurance cycles (>150).

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Section: Resultsmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Shen

Mitrović

et al. 2019

Micromachines

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“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Full‐vdW Heterosynaptic Memtransistor with the Ferroelectric Inserted Functional Layer and its Neuromorphic Applications

Shen,

Li,

Wang

et al. 2024

Adv Funct Materials

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The emergence of 2D van der Waals (vdW) materials, owing to highly tunable electrical conductivity, remarkably free stackability, and excellent compatibility for heterojunction integration, has provided abundant research diversity of artificial synapses. Here, an innovative 2D vdW heterosynaptic memtransistor (vdW‐HT) synapse is proposed with a ferroelectric CuInP2S6 inserted layer. Neuromorphic synaptic weight change of the vdW‐HT synapse in this work are modulated by the synergistic effects of interlayer coupling and ferroelectric polarization reversal. It is the first time to evaluate the required initial energy consumption of ferroelectric vdW‐HT synapses with matrixed biomimetic characteristics of “Learning–Forgetting–Re‐learning–Memorizing.” The required initial energy consumption is only ≈3.06 pJ, which provided supporting evidence to indicate the promising potential of vdW‐HT synapses in exploring neuromorphic applications. A vdW‐HT computing system with artificial recognition capability for intelligent automobiles is established and demonstrated outstanding recognition abilities for multiple targets in various environments. The highest recognition accuracy for pedestrians is 98%. In addition, the excellent recognition property is integrated with a robotic arm, successfully achieving high‐precision grasping behavior and designated position transmission for identified targets. These results provide promising strategies for the integrated development of emerging neuromorphic electronics and industrial applications.

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Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method

Cited by 9 publications

References 37 publications

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Full‐vdW Heterosynaptic Memtransistor with the Ferroelectric Inserted Functional Layer and its Neuromorphic Applications

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