Enhanced response speed of TiO2 nanoarrays based all solid-state ultraviolet photodetector via SiO2 dielectric layer

Yang, Dongmei; Ren, Yuxin; Du, Fenqi; Hu, Peng; Jiao, Yang; Teng, Feng; Fan, Haibo

doi:10.1016/j.jallcom.2021.159053

Cited by 30 publications

(15 citation statements)

References 52 publications

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“…where α is the absorption coefficient, E g is the band gap energy of the material, hν is the incident photon energy, and A is a constant. 33 As shown in Figure 4b, according to this formula, we calculate that the band gap of gallium oxide grown on the titanium sheet is about 4.42 eV, which is slightly smaller than 4.9 eV. The reason for the decrease of the band gap may be caused by the defects of the surface nanorod array.…”

Section: Resultsmentioning

confidence: 90%

“…The greater the R , the higher the sensitivity. The equation is as follows R = normalΔ I PS where Δ I is the difference between the photocurrent and dark current, P is the light power density, and S is the effective irradiation area . The responsivities of the samples with different seed layers (10–50 μL), different bending angles (30, 60°) and different bending times (100 times, 200 times) at 30° were calculated to be 9.3, 15.3, 12.8, 11.2, 10.6, 11.3, 7.8, 10.9, and 10.9 mA/W, respectively, as shown in Figure a–c.…”

Section: Resultsmentioning

confidence: 99%

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Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga₂O₃/Electrolyte Heterojunction with High Stability

Chen,

Han,

Chen

et al. 2023

ACS Appl. Electron. Mater.

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In recent years, Ga 2 O 3 flexible solar-blind ultraviolet photodetectors (UVPDs) are gradually becoming the focus of research and the industry because of their excellent wearability, low manufacturing cost, portability, large area compatibility, and high scalability. However, the crystallization temperature required for high-quality α-phase Ga 2 O 3 films exceeds the heat resistance of most flexible materials, so the growth of Ga 2 O 3 films on flexible substrates is a very big challenge. In this study, a highly ordered α-Ga 2 O 3 nanorod array and flexible solar-blind UV PDs with excellent performance were successfully prepared on a flexible titanium (Ti) substrate at 500 °C by a simple water bath heating method. When irradiated by 254 nm ultraviolet light, the α-phase Ga 2 O 3 flexible photodetector exhibits an excellent self-power optical response at 0 V bias and exhibits excellent photoelectric performance with a responsivity of 15.3 mA/W, a fast rise and fall time of 0.104 and 0.077 s, a photocurrent density of 45.7 μA/cm 2 , and a high detectivity of 13.8 × 10 9 Jones. Bending and repeating experiments demonstrated that the detector had high stability. This study provides a simpler and less expensive method for the preparation of flexible self-powered α-Ga 2 O 3 solar-blind UV photodetectors.

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Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga₂O₃/Electrolyte Heterojunction with High Stability

Chen,

Han,

Chen

et al. 2023

ACS Appl. Electron. Mater.

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“…The incorporation of nanoscale SiO 2 as a dielectric layer for semiconductor materials reportedly enables the construction of PDs with high responsivity and significantly enhanced response speed. [181] Yang et al [182] prepared UV PDs based on nanotree TiO 2 arrays and a SiO 2 dielectric layer. The TiO 2 / SiO 2 hybrid ensures a highly efficient, stable, and visible-blind PD with good wavelength selectivity.…”

Section: Tio 2 /Siomentioning

confidence: 99%

“…[ 181 ] Yang et al. [ 182 ] prepared UV PDs based on nanotree TiO 2 arrays and a SiO 2 dielectric layer. The TiO 2 /SiO 2 hybrid ensures a highly efficient, stable, and visible‐blind PD with good wavelength selectivity.…”

Section: Heterostructure Photodetectorsmentioning

confidence: 99%

Application of Nanostructured TiO₂ in UV Photodetectors: A Review

et al. 2022

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moderate UV light is beneficial for human health, however, excessive UV radiation can cause various human diseases as well as strong destruction to the output of crops and the lifespan of buildings. [1b,3a,4] Therefore, an efficient detection of UV radiation is of significant importance in widespread applications, for example, chemical, environmental, and biological analysis or warning, astronomical investigation, and optical communication. [1c,5] For forewarning UV radiation with high-efficiency, a wide variety of UV PDs such as photomultiplier and silicon diode, have been extensively investigated and applied in the past decades. Nevertheless, there are intrinsic imperfections for the present commercial PDs, such as fragile, large volume, and excessive cost, which are obstacles when meeting the growing requirement of miniaturized and reliable UV detection devices for portable or shipped applications. In recent years, the development of semiconductor-based PDs that work according to the photoelectric effect has received great research interest. [1b,3a,6] In this scenario, a delicate selection of suitable materials with efficient morphological, microstructural, and photoelectrical characteristics plays a key role in the construction of PDs with high-performance. Generally, the PDs work following several different physical mechanisms, that is, surface plasma-wave-assisted effect, photoconductive effect, photothermoelectric effect, and photovoltaic effect, which have been systematically demonstrated in the previous report. [7] More recently, a new generation of wide-bandgap semiconductors including the classification of nitrides (GaN, AlN, BN, etc.), carbides (SiC, diamond, etc.), sulfides (ZnS, etc.), oxides (ZnO, Ga 2 O 3 , TiO 2 , etc.), halide perovskites (e.g., CH 3 NH 3 PbCl 3 ), [8] and their combinations, is emerged as the most attractive material candidates for constructing high-performance UV PDs, owing to their unique advantages, for instance low permittivity, high breakdown electric-fields, good thermal conductivity, high electron saturation rates, excellent radiation resistance, and their appropriate spectral range for UV response. [1d] In addition, the photoelectric conversion processes of the semiconductorbased PDs can be generally described by the behaviors of charge carriers, such as their generation, separation, transportation, and extraction. [9] Therefore, any factor that influences the photon-generated carrier behaviors should be the key parameter for further tuning their photodetecting performances. It As a wide-bandgap semiconductor material, titanium dioxide (TiO 2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and lowcost fabrication, the construction of high-performance photodetectors (PDs) based on TiO 2 nanostructures is ...

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“…With microsecond response and high detection performance, porous Ag/TiO 2 thermoelectric photodetectors have promising applications in various imaging, optical communication, and optical switching fields. Yang et al prepared a novel all-solid heterostructure UV detector based on TiO 2 nanoarrays and SiO 2 dielectric layers [ 9 ] ( Figure 1 a). The addition of SiO 2 had a significant influence on the response rate of the device.…”

Section: Optoelectrical Application Based On Tio 2 ...mentioning

confidence: 99%

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

Sang

Yao

et al. 2023

Nanomaterials

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Titanium dioxide (TiO2) is a kind of wide-bandgap semiconductor. Nano-TiO2 devices exhibit size-dependent and novel photoelectric performance due to their quantum limiting effect, high absorption coefficient, high surface-volume ratio, adjustable band gap, etc. Due to their excellent electronic performance, abundant presence, and high cost performance, they are widely used in various application fields such as memory, sensors, and photodiodes. This article provides an overview of the most recent developments in the application of nanostructured TiO2-based optoelectronic devices. Various complex devices are considered, such as sensors, photodetectors, light-emitting diodes (LEDs), storage applications, and field-effect transistors (FETs). This review of recent discoveries in TiO2-based optoelectronic devices, along with summary reviews and predictions, has important implications for the development of transitional metal oxides in optoelectronic applications for researchers.

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Enhanced response speed of TiO2 nanoarrays based all solid-state ultraviolet photodetector via SiO2 dielectric layer

Cited by 30 publications

References 52 publications

Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga₂O₃/Electrolyte Heterojunction with High Stability

Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga₂O₃/Electrolyte Heterojunction with High Stability

Application of Nanostructured TiO₂ in UV Photodetectors: A Review

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

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Enhanced response speed of TiO2 nanoarrays based all solid-state ultraviolet photodetector via SiO2 dielectric layer

Cited by 30 publications

References 52 publications

Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga2O3/Electrolyte Heterojunction with High Stability

Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga2O3/Electrolyte Heterojunction with High Stability

Application of Nanostructured TiO2 in UV Photodetectors: A Review

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

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Product

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Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga₂O₃/Electrolyte Heterojunction with High Stability

Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga₂O₃/Electrolyte Heterojunction with High Stability

Application of Nanostructured TiO₂ in UV Photodetectors: A Review