Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al<sub>2</sub>O<sub>3</sub>Sensing Membranes

Bae, Tae-Eon; Jang, Hyun‐June; Lee, Se‐Won; Cho, Won-Ju

doi:10.7567/jjap.52.06gk03

Cited by 10 publications

(6 citation statements)

References 31 publications

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“…The obtained sensitivity of DGISFET 2 (454 mV/pH), is comparable to (450 mV/pH), and higher than (402 mV/pH), the values reported for DGISFETs where Ta 2 O 5 was used as the TG dielectric. DGISFETs with different configurations (extended gate) have shown values of 299, 407, and 649 mV/pH; however, in this work the focus has been to study the interfaces (semiconductor–gate dielectric and TG dielectric–electrolyte) and reduction of the TG dielectric thickness; use of the different configurations could help in increase the sensitivity and is the scope of future work.…”

Section: Resultsmentioning

confidence: 99%

Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Bhatt

Kumar

Panda

2019

ACS Appl. Electron. Mater.

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Dual gate ion sensitive field effect transistors (DGISFETs) have elicited interest due to the capability to provide pH sensitivity values several times the Nernst limit. The interfaces in the device, the bottom gate (BG) dielectric−semiconductor, the semiconductor−top gate (TG) dielectric, the TG dielectric− electrolyte, play a crucial role in the performance parameters (such as sensitivity, drift, and hysteresis). While most of the works report use of a single TG dielectric, stacks of dielectrics have the potential to provide a better performance by taking advantage of the beneficial properties of the constituent layers. This has received scant attention and is the motivation of the present work. Four types of TG structure schemes were used using single dielectrics and layers of two dielectrics (Y 2 O 3 and Ta 2 O 5 ) in different sequences. The effects of the material properties and the processing of the dielectrics on the device performance characteristics were investigated, and particularly the interfacial effects utilizing X-ray photelectron spectroscopy depth profiling were studied. Metal oxide semiconductor (MOS) structures and thin film transistor (TFT) structures utilizing these dielectric schemes were fabricated and the leakage, stability, and TFT characteristics were investigated so as to elucidate the experimental results obtained with the DGISFET structures. The simulated and theoretical values of the pH sensitivities were utilized to benchmark the experimental results. The highlights of this detailed study include identification of the diffusion of yttrium into gallium to make the Y 2 O 3 /IGZO interface more stable than the Ta 2 O 5 /IGZO interface; and along with the higher pH sensitivity of Ta 2 O 5 , it is seen that the Ta 2 O 5 /Y 2 O 3 /IGZO/SiO 2 /Si is the best of the DGISFET structures investigated with a sensitivity of 454 mV/ pH, hysteresis of 75 mV, and a drift of 250 mV/h. The learning can be utilized to fabricate DGISFETs with better performance.

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Section: Resultsmentioning

confidence: 99%

Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Bhatt

Kumar

Panda

2019

ACS Appl. Electron. Mater.

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“…Compared to the single gate (SG) operation model (48 mV pH −1 ), the sensitivity of the double gate (DG) was up to 407 mV pH −1 . [109] On the other hand, by integrating signal amplification, a complementary inverter based on OECTs illustrated an ultrahigh sensitivity of 2300 mV dec −1 , which overcame the fundamental limit. [110] Table 4 summarizes the sensitivity of various FET-based biosensors under different conditions.…”

Section: Sensitivitymentioning

confidence: 99%

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Ren

Liang

et al. 2023

Advanced Sensor Research

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It is vital to acquire real‐time pH signals with high resolution as pH variation can reflect important information regarding health status and physiological environment. Field‐effect transistor (FET)‐based biosensors (bio‐FETs), a kind of potentiometric sensor, are being rapidly developed for pH detection due to their advantages of high sensitivity, low temperature dependence, and high portability. More importantly, the high scalability of bio‐FETs renders them applicable for achieving high spatial resolution in pH sensing. In this review paper, the design, operation principle, and critical characteristics of the FET‐based pH sensor are introduced. Then, the recent progress in pH mapping with FET sensor arrays, including static array where a sensor pixel is directly addressed by wiring, and active‐matrix array where a sensor pixel is accessed by additional switching FETs, is presented. Last, typical examples of pH sensor arrays in biomedical applications, such as health monitoring and DNA sequencing and elongation are presented.

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“…Later on, DGISFETs with silicon on insulator (SOI) were studied where Si was used as a semiconductor and SiO 2 was used as the BG dielectric. Bae et al [25] studied the pH sensing of DGISFETs on an SOI substrate, where Si was used as the semiconductor, SiO 2 as the BG dielectric, Al 2 O 3 as TG dielectric as well as the sensing layer. In this study, the DGISFET was operated in both the SG and DG operation modes and sensitivities of 48 mV/pH and 407 mV/pH, respectively, were obtained.…”

Section: Dgisfets Using Different Semiconductor and Gate Dielectricsmentioning

confidence: 99%

“…A sensitivity of 129 mV/pH was obtained by Jang et al [36] by using Ta 2 O 5 as the TG dielectric. Sensitivities of 347 mV/pH [40] and 407 mV/pH [25] were obtained with Al 2 O 3 as the TG dielectric (which also served as the sensing layer) and SiO 2 as the BG dielectric. It was reported in the literature that after modification of the interface, sensitivity and stability of DGISFETs improved implying that the material properties also affect the performance of DGISFETs.…”

Section: Ph Sensingmentioning

confidence: 99%

Dual‐gate ion‐sensitive field‐effect transistors: A review

Bhatt

Panda

2021

Electrochemical Science Adv

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Ion-sensitive field-effect transistors (ISFETs) are electrochemical sensors that work on the principle of metal-oxide field-effect transistors. Dual-gate ionsensitive field-effect transistors (DGISFETs) are an advanced version of ISFETs with an additional gate dielectric, resulting in sensitivity enhancement on account of the coupling of the capacitances of the two gate dielectrics. ISFETs were demonstrated first in 1970 and there are several review articles available on various aspects of ISFETs; although DGISFETs were first demonstrated in 2010, there are no focused review articles on this subject and this is the motivation of present work. This review has explored the understanding of the basic platform, the working principle, different structures, and various applications of DGISFETs. Further, types of DGISFETs are elaborated based on their architecture, material used for fabrication, and substrates used for such devices with utilization of different semiconductor and gate dielectric materials, rigid and flexible substrates. The state-of-the-art of rigid and flexible DGISFETs is discussed for various applications. Challenges in the fabrication and utilization of DGISFETs in various fields and further advances are discussed.

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Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al₂O₃Sensing Membranes

Cited by 10 publications

References 31 publications

Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Dual‐gate ion‐sensitive field‐effect transistors: A review

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Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al2O3Sensing Membranes

Cited by 10 publications

References 31 publications

Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Dual‐gate ion‐sensitive field‐effect transistors: A review

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Product

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Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al₂O₃Sensing Membranes