Enhanced sensitivity from Ag micro-flakes encapsulated Ag-doped ZnO nanorods-based UV photodetector

Rajamanickam, Suvindraj; Mohammad, Sabah M.; Razak, Ibrahim Abdul; Muhammad, A.; Abed, Shireen Mohammed

doi:10.1016/j.materresbull.2023.112148

Cited by 19 publications

(2 citation statements)

References 45 publications

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“…Metal–semiconductor hybrid nanostructures have emerged as promising candidates for a wide range of applications, including photodetectors, photocatalysts, plasmonic sensors, and environmental care. − In particular, Ag-nanodot-decorated semiconducting ZnO nanorod (ZNR) structures have shown great potential for high-performance UV sensing, among other applications, owing to the synergistic effect of localized surface plasmon resonance (LSPR) and enhanced charge carrier transport. − However, conventional means of fabricating ZnO and Ag nanostructures, such as chemical and physical vapor deposition or electron-beam lithography, often require high-temperature processing (especially for chemical vapor deposition) and/or complex vacuum equipment while also incurring high cost and slow serial processes, all of which impede their practical applications. Notably, the precise positioning of ZnO nanodots on specific regions of Ag nanostructures on diverse substrates is beneficial for application-specific uses, yet it is uneasy in conventional methods. − …”

Section: Introductionmentioning

confidence: 99%

All-Solution-Based, Low-to-Room-Temperature Fabrication of Position-Controlled Metal-Nanodot-Decorated Semiconductor Nanorods for Enhanced Optoelectronic Transducers

Ji,

Son,

Kim

et al. 2024

ACS Appl. Nano Mater.

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We demonstrate the all-solution-based fabrication of metalnanodot-decorated semiconductor nanorod structures, with the entire process performable at very low or room temperatures. On the surfaces of semiconducting ZnO nanorods (ZNRs) hydrothermally grown on a solutionprocessed Ag layer at 90 °C, Ag nanodots are reduced from Ag cations in an ionic solution at room temperature by taking UV-induced electrons from ZNRs. Ag nanodots can be deposited at a specific position (top, bottom, or whole region) of the ZNRs by using a controlled ionic Ag solution coating method. We investigate the UV-assisted room-temperature photoreduction (RTPR) mechanism by focusing on the roles of ZnO and solvent. We further examine that the size, density, and spatial distribution of Ag nanodots can be controlled by regulating the concentration of the ionic Ag solution and RTPR time. The resulting hybrid Ag/ZNR architecture, processable on a large-area flexible substrate, exhibits significantly enhanced photocurrent level, responsivity, and selectivity for the incident UV light due to the localized surface plasmon resonance of the Ag nanodots and rapid electron transfer across the Ag/ZnO interface. Our all-solution-based room-temperature approach offers an environmentally sustainable, low-cost, and scalable method for the design and fabrication of metal-nanodot-decorated semiconductor nanostructures applicable to optoelectronic transducers and many other applications.

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Section: Introductionmentioning

confidence: 99%

All-Solution-Based, Low-to-Room-Temperature Fabrication of Position-Controlled Metal-Nanodot-Decorated Semiconductor Nanorods for Enhanced Optoelectronic Transducers

Ji,

Son,

Kim

et al. 2024

ACS Appl. Nano Mater.

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“…Doping is an effective method for improving the performance of UV photodetectors [12][13][14][15]. Doping can increase the carrier concentration in materials, thereby enhancing their conductivity and optoelectronic performance [16][17][18][19][20]. In studies, the photocurrent of Ga 2 O 3 devices can be improved by doping with In 2 O 3 , which increases the device's responsivity [21,22].…”

Section: Introductionmentioning

confidence: 99%

Sol-Gel Synthesized Amorphous (InxGa1−x)2O3 for UV Photodetection with High Responsivity

Zhang,

Zhou,

Liu

et al. 2024

Sensors

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β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1−x)2O3 (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga2O3 leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InxGa1−x)2O3 can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In0.4Ga1.6O3 for high-performance MSM UV photodetectors.

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Enhanced photoresponse of annealed ZnO nanoparticle film near its bandgap

Jafari,

Ebrahimpour

2023

Appl. Phys. A

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Enhanced sensitivity from Ag micro-flakes encapsulated Ag-doped ZnO nanorods-based UV photodetector

Cited by 19 publications

References 45 publications

All-Solution-Based, Low-to-Room-Temperature Fabrication of Position-Controlled Metal-Nanodot-Decorated Semiconductor Nanorods for Enhanced Optoelectronic Transducers

All-Solution-Based, Low-to-Room-Temperature Fabrication of Position-Controlled Metal-Nanodot-Decorated Semiconductor Nanorods for Enhanced Optoelectronic Transducers

Sol-Gel Synthesized Amorphous (InxGa1−x)2O3 for UV Photodetection with High Responsivity

Enhanced photoresponse of annealed ZnO nanoparticle film near its bandgap

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