Enhanced short-circuit performance of 3.3kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in NPT technology with RTA Anode

Balachandran, Ajith; Sweet, M.; Narayanan, E.M. Sankara; Ray, Shona; Quaresma, H.J.; Bruce, J.

doi:10.1109/ispsd.2012.6229050

2012 24th International Symposium on Power Semiconductor Devices and ICs 2012

DOI: 10.1109/ispsd.2012.6229050

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Enhanced short-circuit performance of 3.3kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in NPT technology with RTA Anode

Ajith Balachandran

M. Sweet

E.M. Sankara Narayanan

et al.

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2015

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4500 V SPT⁺ IGBT optimization on static and dynamic losses

Dai¹,

Tian

Zhang

et al. 2015

J. Semicond.

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This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor (HV IGBTs). A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through (SPT) concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT+ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT+ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop (Von) and turn-off loss (Eoff) in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT+ IGBT.

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4500 V SPT⁺ IGBT optimization on static and dynamic losses

Dai¹,

Tian

Zhang

et al. 2015

J. Semicond.

View full text Add to dashboard Cite

show abstract

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Enhanced short-circuit performance of 3.3kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in NPT technology with RTA Anode

Cited by 1 publication

References 7 publications

4500 V SPT⁺ IGBT optimization on static and dynamic losses

4500 V SPT⁺ IGBT optimization on static and dynamic losses

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Enhanced short-circuit performance of 3.3kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in NPT technology with RTA Anode

Cited by 1 publication

References 7 publications

4500 V SPT+ IGBT optimization on static and dynamic losses

4500 V SPT+ IGBT optimization on static and dynamic losses

Contact Info

Product

Resources

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4500 V SPT⁺ IGBT optimization on static and dynamic losses

4500 V SPT⁺ IGBT optimization on static and dynamic losses