POWER5 offers significantly increased performance over previous POWER designs by incorporating simultaneous multithreading, an enhanced memory subsystem, and extensive RAS and power management support. The 276M transistor processor is implemented in 130nm silicon-on-insulator technology with 8-level of Cu metallization and operates at >1.5 GHz. General TermsDesign Keywords POWER5, Microprocessor Design, Simultaneous Multi-threading (SMT), Temperature Sensor, Power Reduction, Clock Gating POWER5 TM is the next generation of IBM's POWER microprocessors. This design, shown below in Figure 1, sets a new standard of industry-leading server performance by incorporating simultaneous multithreading (SMT), an enhanced distributed switch and memory subsystem supporting 1-64w SMP, and extensive RAS support. First pass hardware using IBM's 130nm silicon-on-insulator technology operates above 1.5GHz at 1.3V.POWER5's dual-threaded SMT [1] creates up to two virtual processors per core, improving execution unit utilization and masking memory latency. Although a simplistic SMT implementation promised ~20% performance improvement, resizing critical micro-architectural resources almost doubles in many cases the SMT performance benefit at a 24% area cost per core.The two SMT cores interface with an enhanced memory subsystem. The cache hierarchy includes a larger (1.9MB) L2 cache, reduced L3 latency, and a larger (36MB) L3 cache located on a custom DRAM companion chip. The new on-chip main memory controller improves latency and the enhanced interconnect fabric extends SMP scalability. Figure 2 depicts the microarchitectural changes introduced with POWER5 chip.

No abstract

No abstract

Abstract-3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results in an enhancement of current gain of the inherent thyristor action which reduces the forward voltage drop even more than that of a scaled Trench IGBT (TIGBT). For identical switching losses, at a scaling factor k=3, the forward voltage drop is reduced by 20% at 300K and 30% at 400K when compared to the conventional TCIGBT (k=1). Most importantly, despite its lower conduction losses than an equivalent TIGBT, a scaled TCIGBT structure can maintain its short circuit capability, due to the additional scaling principle applied to the n-well and p-well regions, maintaining the self-clamping feature. Thus, TCIGBT is a more efficient chip-for-chip, reliable replacement of a TIGBT for energy savings in applications.Index Terms-IGBT, Clustered IGBT, Vce(sat) -Eoff trade-off, power semiconductor device, scaling rule, short circuit capability, self-clamping feature.

No abstract