Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Abstract

Abstract-3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results in an enhancement of current gain of the inherent thyristor action which reduces the forward voltage drop even more than that of a scaled Trench IGBT (TIGBT). For identical switching losses, at a scaling factor k=3, the forward voltage drop is reduced by 20% at 300K and 30% at 400K when compared to the conventional TCIGBT (k=1). Most importantly, despite its lower conduction losses than an equivalent TIGBT, a scaled TCIGBT structure can maintain its short circuit capability, due to the additional scaling principle applied to the n-well and p-well regions, maintaining the self-clamping feature. Thus, TCIGBT is a more efficient chip-for-chip, reliable replacement of a TIGBT for energy savings in applications.Index Terms-IGBT, Clustered IGBT, Vce(sat) -Eoff trade-off, power semiconductor device, scaling rule, short circuit capability, self-clamping feature.

Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices

“…To understand the impact of the 3D scaling rules on the DA performance of the devices, scaled TIGBTs [4] as well as scaled TCIGBTs [17] in FS technologies are considered, as shown in Fig. 17 and Fig.…”

“…The k3-TCIGBT yields a low Vce(sat) of 1.67 V even at Jc = 500 A/cm 2 at R.T., which is 23 % lower than that of k3-TIGBT. Furthermore, the non-saturated I-V behavior of narrow mesa TIGBTs is effectively suppressed in k3-TCIGBT due to enhanced self-clamping feature [17]. The Eoff dependence on Rg between scaled TIGBTs and TCIGBTs were compared under same Vce(sat) conditions, as shown in Fig.…”

3-D Scaling Rules for High-Voltage Planar Clustered IGBTs

“…1(b). In contrast, the 3-D scaling rules on 1.2 kV Trench Clustered IGBT [13] does not suffer from this drawback because the enhanced self-clamping feature can keep the MOS cells under the self-clamping voltage and therefore effectively control the current saturation levels. As the self-clamping voltage is independent of temperature, the CIBL effect can be effectively suppressed even under high temperature, as shown in Fig.…”

“…A 4.5 kV field-stop planar CIGBT device is analyzed in detail to demonstrate the proposed 3-D scaling rules through 3-D TCAD tools [14]. Different from the previous scaling concept discussed in [13], the scaling rules proposed herein aim to achieve simultaneous reduction in on-state voltage drop and current saturation level. In addition, the on-state performances of the scaled CIGBTs are compared against the theoretical IGBT performance limit and state-of-the-art power semiconductor devices.…”

“…The V ce(sat) for medium voltage (≤ 1700 V) CIGBTs are the voltage drops at J c = 200 A/cm 2 whilst the V ce(sat) for high voltage (≥ 3300 V) CIGBTs are the voltage drops at J c = 50 A/cm 2 . The planar CIGBTs employ the scaling rules proposed in this work while the trench CIGBTs use the scaling rules proposed in [13]. To support the rated breakdown voltage, the N-well and P-well depths of high voltage (≥ 3300 V) trench CIGBTs are kept constant.…”