2023
DOI: 10.1021/acsami.3c08895
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Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering

Fei Huang,
Balreen Saini,
Zhouchangwan Yu
et al.

Abstract: Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal−oxide−semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understandi… Show more

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Cited by 8 publications
(1 citation statement)
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“…To encourage the growth of the ferroelectric wurtzite phase in sol–gel synthesized ZnMgO, the addition of an interfacial seed layer of ZnO prior to ZnMgO deposition was studied. A similar approach using HfO 2 interfacial layers with Hf 0.5 Zr 0.5 O 2 ferroelectric has been demonstrated previously . Deposition of ZnMgO thin films on ZnO interfacial layers on Si(111) was achieved through a spin-coating sol–gel process.…”
mentioning
confidence: 95%
“…To encourage the growth of the ferroelectric wurtzite phase in sol–gel synthesized ZnMgO, the addition of an interfacial seed layer of ZnO prior to ZnMgO deposition was studied. A similar approach using HfO 2 interfacial layers with Hf 0.5 Zr 0.5 O 2 ferroelectric has been demonstrated previously . Deposition of ZnMgO thin films on ZnO interfacial layers on Si(111) was achieved through a spin-coating sol–gel process.…”
mentioning
confidence: 95%