Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction

Camaret, C. De; Bourgeois, Grégoire Le; Cueto, O.; Meli, V.; Martin, Simon J.; Despois, D.; Beugin, V.; Castellani, N.; Cyrille, Marie-Claire; Andrieu, F.; Arcamone, Julien; Le-Friec, Y.; Navarro, G.

doi:10.1109/essderc55479.2022.9947190

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) 2022

DOI: 10.1109/essderc55479.2022.9947190

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Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction

C. De Camaret

Grégoire Le Bourgeois

O. Cueto

et al.

Abstract: In this work, we present the extensive electrical characterization of 4kb Phase-Change Memory (PCM) arrays based on "Wall" structure and Ge-rich GeSbTe (GST) material, integrating a SiC dielectric with low thermal conductivity surrounding the heater element for enhanced cell thermal efficiency. We investigate the effects of the introduction of such dielectrics on the electrical performances of the device and we provide a promising path to achieve energy-efficient PCM cells supporting our results by electro-the… Show more

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2024

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Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature

Daoudi,

Nolot,

Dartois

et al. 2024

Physica Rapid Research Ltrs

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Ge‐rich GeSbTe chalcogenide alloys have gained significant attention in the field of phase‐change materials due to their remarkable thermal stability and thus their suitability for integration in non‐volatile memories targeting embedded automotive applications. In this study we focus on the effects of different encapsulating materials on the evolution and on the crystallization kinetic of N‐doped Ge‐rich GeSbTe films. These films are annealed with temperatures compatible with the Back‐End‐of‐Line (BEOL) of the CMOS fabrication. First, we show how the encapsulation layer thickness should be tuned in order to protect the layer from oxidation and at the same time to avoid delamination phenomena. We compare TaN, C, TiN, SiC and SiN used as encapsulating layers. The segregation and crystallization of Ge‐rich GeSbTe alloys appear more homogeneous in the case of C, TiN and SiC. On the contrary we observe the effects of an interfacial heterogeneous nucleation in the case of TaN and SiN. It results in a different final morphology of the chalcogenide layer after annealing depending on the encapsulation, with different grain sizes and kinetic of phase separation.This article is protected by copyright. All rights reserved.

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Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature

Daoudi,

Nolot,

Dartois

et al. 2024

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

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Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction

Cited by 1 publication

References 13 publications

Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature

Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature

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