Enhanced Thermal Oxidation of Silicon in Steam Ambient by UV-Irradiation

Ishikawa, Yutaka; Shibamoto, Tsuyoshi; Nakamichi, Ichiro

doi:10.1143/jjap.31.l750

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…Since O 3 has a high adsorption coefficient in the UV range between 220 and 310 nm, a KrF excimer laser source (λ = 248 nm) has been used, which provides the necessary high photon density. In comparison, the photo-oxidation of O 2 [23,24] is less effective, since O 2 's photodissociation rate is only low and necessitates shorter laser wavelengths (usually 172 or 126 nm), which have a short penetration depth in air and are prone to induce defects at the Si/SiO 2 interface [25]. In contrast, the UV-light to dissociate O 3 does not cause any damage to the silicon sample.…”

Section: Ozone Generatorsmentioning

confidence: 99%

Silicon oxidation by ozone

Fink

Nakamura

Ichimura

et al. 2009

J. Phys.: Condens. Matter

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Understanding the oxidation of silicon has been an ongoing challenge for many decades. Ozone has recently received considerable attention as an alternative oxidant in the low temperature, damage-free oxidation of silicon. The ozone-grown oxide was also found to exhibit improved interface and electrical characteristics over a conventionally dioxygen-grown oxide. In this review article, we summarize the key findings about this alternative oxidation process. We discuss the different methods of O(3) generation, and the advantages of the ozone-grown Si/SiO(2) interface. An understanding of the growth characteristics is of utmost importance for obtaining control over this alternative oxidation process.

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Section: Ozone Generatorsmentioning

confidence: 99%

Silicon oxidation by ozone

Fink

Nakamura

Ichimura

et al. 2009

J. Phys.: Condens. Matter

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High-quality gate oxide formed at 150 °C for flexible electronics

Iijima

Usuda

Uchida

et al. 2014

Jpn. J. Appl. Phys.

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This study describes the low temperature process to form the gate oxide of MOSFETs using a SiO nano-powder and post UV oxidation. The highquality SiO 2 gate oxide was successfully formed on a silicon substrate by vacuum evaporation of the SiO nano-powder followed by the post UV oxidation in steam at 200 °C. However, further lowering of the oxidation temperature to 150 °C degraded the insulating property and increased the interface trap density. In order to improve the SiO 2 /Si interface quality, the Si surface was irradiated by vacuum UV (VUV) using a Xe excimer lamp before evaporation of the SiO nano-powder. This substrate treatment has substantially improved the SiO 2 /Si interface quality. The physical mechanisms of the VUV and UV oxidation are discussed in order to understand the low-temperature formation of the SiO 2 .

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Enhanced Thermal Oxidation of Silicon in Steam Ambient by UV-Irradiation

Cited by 2 publications

References 9 publications

Silicon oxidation by ozone

Silicon oxidation by ozone

High-quality gate oxide formed at 150 °C for flexible electronics

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