Enhanced Thermal Oxidation of Silicon by UV-Irradiation

Ishikawa, Yutaka; Shibamoto, Tsuyoshi; Uchihara, Takeshi; Nakamichi, Ichiro

doi:10.1143/jjap.30.l661

Cited by 11 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With the goal of realizing low-temperature silicon oxidation, the photooxidation method using O 2 and UV lamps has been studied intensively. [1][2][3][4][5] Fang et al 5) revealed that the oxidation rate can be as high as 8 nm/min when UV light ( ¼ 126 nm) is exposed to O 2 atmosphere. However, some film quality factors (such as the leakage current) are not as good as those of the thermal oxide.…”

mentioning

confidence: 99%

Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone

Tosaka

Nishiguchi

Nonaka

et al. 2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

An ultra low-temperature (< 300°C) silicon oxidation process in which KrF excimer laser light (λ=248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2 nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler–Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.

show abstract

mentioning

confidence: 99%

Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone

Tosaka

Nishiguchi

Nonaka

et al. 2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The technique has reportedly been used to deposit silicon as well as silicon-germanium alloys and enhance the thermal oxidation of silicon at greatly reduced temperatures. [21][22][23] Furthermore, in a more relevant application, low-fluence UV laser irradiation (140 mJ/cm 2 as compared to the high 450 mJ/cm 2 fluence required to melt silicon) at a wavelength of 248 nm has been observed to preferentially remove arsenic dopants away from an arsenic doped silicon substrate. 24 Based upon these findings, it is possible that UV light could also aid in the desorption of the terminating arsenic surface atoms on silicon (100) substrates.…”

Section: Resultsmentioning

confidence: 99%

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

O’Neil¹,

Öztürk²,

Batchelor

et al. 1999

J. Electrochem. Soc.

View full text Add to dashboard Cite

In this report, we present results on the low thermal budget deposition of selective silicon epitaxy on heavily arsenic implanted substrates using Si2H6 and Cl2 in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor. The selectivity of silicon to SiO2 as well as the silicon growth kinetics, epitaxial quality, and dopant incorporation for varying substrate implant dose conditions and varying levels of chlorine during processing were investigated. We demonstrate that an increase in the arsenic implant dose can reduce the silicon growth by means of an inherent incubation time for deposition occurring in a chlorinated ambient. The extent to which the silicon growth suppression occurs, however, can be lessened by specific changes in the system conditions, and therefore, growth reductions due to arsenic can be minimized. In addition to changes in the silicon growth kinetics, arsenic implanted substrates have demonstrated a tendency to degrade the surface morphology and enhance the density of defects within the deposited silicon epitaxial films. Furthermore, by depositing the silicon film immediately following implantation and prior to any high temperature anneal, movement of arsenic into the deposited silicon layers has been observed at growth temperatures as low as 800°C. Therefore, the incorporation of arsenic into the deposited epitaxial films has been found to be controllable such that abrupt profiles or intentional diffuse structures can be achieved by variation of the process sequence and the annealing conditions. © 1999 The Electrochemical Society. All rights reserved.

show abstract

“…2 For low pressure plasmas or when species are generated close to the target surface, however, reactions of metastable O atoms may be significant. There have been very few studies addressing the surface reactivity of O( 1 D), 5 but it has been speculated that reaction rates for this species may exceed those of ground-state O atoms by one to two orders of magnitude. 1 In modeling of oxygen containing plasmas, presumably because of the lack of data, O( 1 D) is either not included or the only ''reaction'' channel considered for the O( 1 D) -SiO 2 surface interaction is physical quenching to O( 3 P) with unit probability.…”

Section: Introductionmentioning

confidence: 99%

Oxygen atom interactions with fused silica surfaces: 1D and 3P state-resolved energy transfer dynamics

Buntin

Litorja

2003

The Journal of Chemical Physics

View full text Add to dashboard Cite

A laser-based O atom beam source together with state-resolved detection techniques are used to characterize the energy transfer dynamics of ground (3P) and electronically excited (1D) state O atoms interacting with a fused silica surface. Time-of-flight spectra of the incident beam and scattered O atoms are measured, and provide detailed information regarding state-resolved angular and velocity distributions. We find a significant degree of “thermalization” (angular, fine structure state, and velocity distributions) in the scattered O(3P) atoms. The survival probability of O(1D) is determined to be ⩽0.01, and the probability for O(1D) quenching to “super-elastic” O(3P) is 0.05. Given that the measured probability for radiative quenching of 1D is not significant (⩽0.001), these results indicate that the majority of the available energy in the incident O atoms (both 3P and 1D) is transferred to the substrate. The implications of the scattering/energy transfer dynamics with respect to the O atom/fused silica surface interactions are discussed.

show abstract

Enhanced Thermal Oxidation of Silicon by UV-Irradiation

Cited by 11 publications

References 5 publications

Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone

Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

Oxygen atom interactions with fused silica surfaces: 1D and 3P state-resolved energy transfer dynamics

Contact Info

Product

Resources

About