Enhanced Thermoelectric Performance of Bi2O2Se with  Ag Addition

Zhan, Bin; Liu, Yaochun; Lan, Jinle; Zeng, Chengcheng; Lin, Yuh-Chieh; Nan, Ce‐Wen

doi:10.3390/ma8041568

Cited by 47 publications

(27 citation statements)

References 24 publications

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“…Nevertheless, the electrical conductivity for pristine Bi 2 O 2 Se is too low for a high‐performance TE material (~2 S/cm). Previous studies concentrated on the replacement of part of Bi 3+ with tetravalent Sn 4+ , Bi deficiencies, as well as compositing with Ag to optimize the electrical transport properties. However, the relatively low ZT values of Bi 2 O 2 Se‐based materials should be further improved.…”

Section: Introductionsupporting

confidence: 72%

“…Benefitting from both the improvement of the power factor and the suppression of the thermal conductivity, the maximum ZT value of 0.23 at 823 K is achieved for Bi 2 O 2 Se 0.985 Cl 0.015 , which is 188% higher than that of the pristine Bi 2 O 2 Se. Moreover, this figure of merit is higher than that of any other Bi 2 O 2 Se reported in the literature …”

Section: Resultsmentioning

confidence: 99%

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Enhanced thermoelectric performance of n‐type Bi₂O₂Se by Cl‐doping at Se site

et al. 2017

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The n-type polycrystalline Bi 2 O 2 Se 1Àx Cl x (0≤x≤0.04) samples were fabricated through solid-state reaction followed by spark plasma sintering. The carrier concentration was markedly increased to 1.38910 20 cm À3 by 1.5% Cl doping. The maximum electrical conductivity is 213.0 S/cm for x=0.015 at 823 K, which is much larger than 6.2 S/cm for pristine Bi 2 O 2 Se. Furthermore, the considerable enhancement of the electrical conductivity outweighs the moderate reduction of the Seebeck coefficient by Cl doping, thus contributing to a high power factor of 244.40 lÁWK À2 Ám À1 at 823 K. Coupled with the intrinsically suppressed thermal conductivity originating from the low velocity of sound and Young's modulus, a ZT of 0.23 at 823 K for Bi 2 O 2 Se 0.985 Cl 0.015 was achieved, which is almost threefold the value attained in pristine Bi 2 O 2 Se. It reveals that Se-site doping can be an effective strategy for improving the thermoelectric performance of the layered Bi 2 O 2 Se bulks. K E Y W O R D S doping, electrical conductivity, layered crystal structures, thermoelectric properties, Young's modulus Engineering,

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Section: Introductionsupporting

confidence: 72%

Section: Resultsmentioning

confidence: 99%

Enhanced thermoelectric performance of n‐type Bi₂O₂Se by Cl‐doping at Se site

et al. 2017

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“…Ultimately, the highest figure of merit ZT reaches 0.28 at 823 K for Bi 2 O 2 Se 0.96 Te 0.04 , which is enhanced by almost a factor of 2 as compared to that of the pristine Bi 2 O 2 Se. Figure B compares the ZT values of Bi 2 O 2 Se 0.96 Te 0.04 and those of other Bi 2 O 2 Se‐based thermoelectric materials, which shows that the thermoelectric performance of Te‐substituted Bi 2 O 2 Se is superior to those of previously reported works.…”

Section: Resultsmentioning

confidence: 78%

“…The temperature‐dependent ZT values for Bi 2 O 2 Se 1‐ x T e x ceramics (A); the comparison of ZT values of Bi 2 O 2 Se 0.96 Te 0.04 and those of other Bi 2 O 2 Se‐based thermoelectric materials (B) [Color figure can be viewed at wileyonlinelibrary.com]…”

Section: Resultsmentioning

confidence: 99%

Synergistically optimizing electrical and thermal transport properties of Bi₂O₂Se ceramics by Te‐substitution

Tan

Liu

et al. 2017

J Am Ceram Soc

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Bi 2 O 2 Se oxyselenides, characterized with intrinsically low lattice thermal conductivity and large Seebeck coefficient, are potential n-type thermoelectric material in the mediate temperature range. Given the low carrier concentration of~1015 cm À3at 300 K, the intrinsically low electrical conductivity actually hinders further enhancement of their thermoelectric performance. In this work, the isovalent Tesubstitution of Se plays an effective role in narrowing the band gap, which notably increases the carrier concentration to~10 18 cm À3 at 300 K and the electron conduction activation energy has been lowered significantly from 0.33 to 0.14 eV. As a consequence, the power factor has been improved from K E Y W O R D Sdopants/doping, electrical conductivity, thermal conductivity, thermoelectric properties | INTRODUCTIONEver-increasingly severe energy and environment crisis is a global issue and thus exploration of clean and sustainable energy sources has become a worldwide consensus. Thermoelectrics, capable of directly and reversibly converting temperature difference into electricity without moving parts, is currently considered as a highly possible solution. Numerous efforts have been devoted to identifying novel thermoelectric materials as well as optimizing the thermoelectric performance of well-known ones. 1,2 The practical energy conversion efficiency is determined by the figure of merit, ZT = S 2 rT/j, where S, r, T and j represent the Seebeck coefficient, electrical conductivity, absolute temperature and the thermal conductivity, respectively. However, these properties defining the ZT value are strongly interrelated via the carrier concentration, making it quite challenging to obtain high thermoelectric performance. 3 Due to the low conversion efficiency, the application of thermoelectric devices is limited to niche market

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“…First, Bi 2 O 2 Se was suggested to be a good thermoelectric material. [2][3][4][5][6][7] In 2010, Ruleova et al reported the thermoelectric properties of Bi 2 O 2 Se and they found that Bi 2 O 2 Se is an n-type semiconductor with a very low thermal conductivity and a relatively high gure of merit ZT about 0.2 at 800 K. 2 Several theoretical works were also conducted to explore its thermoelectric properties. [8][9][10][11] Second, Bi 2 O 2 Se has an ultrahigh electron mobility.…”

Section: Introductionmentioning

confidence: 99%

Infrared and Raman spectra of Bi₂O₂X and Bi₂OX₂ (X = S, Se, and Te) studied from first principles calculations

Chen

et al. 2019

RSC Adv.

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Enhanced Thermoelectric Performance of Bi2O2Se with Ag Addition

Cited by 47 publications

References 24 publications

Enhanced thermoelectric performance of n‐type Bi₂O₂Se by Cl‐doping at Se site

Enhanced thermoelectric performance of n‐type Bi₂O₂Se by Cl‐doping at Se site

Synergistically optimizing electrical and thermal transport properties of Bi₂O₂Se ceramics by Te‐substitution

Infrared and Raman spectra of Bi₂O₂X and Bi₂OX₂ (X = S, Se, and Te) studied from first principles calculations

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Enhanced Thermoelectric Performance of Bi2O2Se with Ag Addition

Cited by 47 publications

References 24 publications

Enhanced thermoelectric performance of n‐type Bi2O2Se by Cl‐doping at Se site

Enhanced thermoelectric performance of n‐type Bi2O2Se by Cl‐doping at Se site

Synergistically optimizing electrical and thermal transport properties of Bi2O2Se ceramics by Te‐substitution

Infrared and Raman spectra of Bi2O2X and Bi2OX2 (X = S, Se, and Te) studied from first principles calculations

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Enhanced thermoelectric performance of n‐type Bi₂O₂Se by Cl‐doping at Se site

Enhanced thermoelectric performance of n‐type Bi₂O₂Se by Cl‐doping at Se site

Synergistically optimizing electrical and thermal transport properties of Bi₂O₂Se ceramics by Te‐substitution

Infrared and Raman spectra of Bi₂O₂X and Bi₂OX₂ (X = S, Se, and Te) studied from first principles calculations