2023
DOI: 10.1021/acsaem.3c00608
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Enhanced Thermoelectric Performance of Tin(II) Sulfide Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition

Abstract: Orthorhombic SnS exhibits excellent thermoelectric performance as a consequence its relatively high Seebeck coefficient and low thermal conductivity. In the present work, polycrystalline orthorhombic SnS thin films were prepared by aerosol-assisted chemical vapor deposition (AACVD) using the single source precursor dibutyl-bis(diethyldithiocarbamato)­tin­(IV) [Sn­(C4H9)2(S2CN­(C2H5)2)2]. We examined the effects of the processing parameters on the composition, microstructure, and electrical transport properties… Show more

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Cited by 5 publications
(11 citation statements)
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“…Samples with a Cu/(Zn + Sn) ratio of 1.01 had the highest PF of 46.52 μW K −2 m −1 at 400 K. 18 As a processing technique, aerosol-assisted chemical vapor deposition (AACVD) has the advantages of being low cost and simple to operate, together with easily adjustable atomic ratios compared to many established CVD-type processes. 19 In this work we employ AACVD to deposit CZTS thin films using metal diethyldithocarbamate complexes as precursors. 20 In an earlier investigation, Kevin et al prepared Cu 2 (Zn y Fe 1−y )SnS 4 (CZFTS) and Cu 2 (Zn y Fe 1−y )SnSe 4 (CZFTSe) thin films using AACVD, and their Fe-rich CZFTS thin films, deposited with 1:1 molar ratio of Fe and Zn diethyldithocarbamate precursors, showed significantly enhanced electrical conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…Samples with a Cu/(Zn + Sn) ratio of 1.01 had the highest PF of 46.52 μW K −2 m −1 at 400 K. 18 As a processing technique, aerosol-assisted chemical vapor deposition (AACVD) has the advantages of being low cost and simple to operate, together with easily adjustable atomic ratios compared to many established CVD-type processes. 19 In this work we employ AACVD to deposit CZTS thin films using metal diethyldithocarbamate complexes as precursors. 20 In an earlier investigation, Kevin et al prepared Cu 2 (Zn y Fe 1−y )SnS 4 (CZFTS) and Cu 2 (Zn y Fe 1−y )SnSe 4 (CZFTSe) thin films using AACVD, and their Fe-rich CZFTS thin films, deposited with 1:1 molar ratio of Fe and Zn diethyldithocarbamate precursors, showed significantly enhanced electrical conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…31–36 SnSe has been identified as an extremely promising TE material with an ultra-high bulk ZT max ≈ 2.6 at 923 K, 37 a good ZT over a wide temperature range of 300–773 K, 38 and an even higher polycrystalline ZT max ≈ 3.1 at 773 K. 39 SnS shows very similar structural chemistry to SnSe, and is advantageous due to the higher abundance and lower toxicity of S, but has yet to demonstrate comparable TE performance. 40–42…”
Section: Introductionmentioning
confidence: 99%
“…[31][32][33][34][35][36] SnSe has been identified as an extremely promising TE material with an ultra-high bulk ZT max E 2.6 at 923 K, 37 a good ZT over a wide temperature range of 300-773 K, 38 and an even higher polycrystalline ZT max E 3.1 at 773 K. 39 SnS shows very similar structural chemistry to SnSe, and is advantageous due to the higher abundance and lower toxicity of S, but has yet to demonstrate comparable TE performance. [40][41][42] The Ge chalcogenides exhibit similar structures and optoelectronic properties to the Sn analogues, but their TE performance is less well characterised. However, Ge is 1000Â more abundant than Te and less toxic than Pb, 43 making GeS and GeSe attractive as prospective TEs.…”
Section: Introductionmentioning
confidence: 99%
“…Thin-film thermoelectric materials offer numerous advantages, including low costs, low weights, and niche deployment opportunities. These qualities mean that thin-film materials are particularly well-suited for the development of compact devices, such as wearable electronics and microscale cooling systems, in contrast to the challenges bulk materials face in small-scale applications . In view of the excellent thermoelectric performance of Cu 12 Sb 4 S 13 bulk materials, there should be opportunities for Cu 12 Sb 4 S 13 thin films to be used in portable and wearable thermoelectric devices.…”
Section: Introductionmentioning
confidence: 99%