Enhanced thermoelectric properties of 2H–MoS2 thin film by tuning post sulfurization temperature

Realization of low potential barrier in MoS2/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

“…´-742 10 4 S m −1 for MoS 2 thin film [8]. The postsulfurization method increased the crystalline size and the energy filtering effect which further enhanced the σ of 53 S m −1 for MoS 2 film [9]. In a micrometer 2D thin-film MoS 2 , the σ of 3.4 S m −1 [10] is obtained even at a temperature gradient of 40 °C.…”