Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

Abstract

Abstract:In this study,

Thermoelectric and Transport Properties of Permingeatite Cu3SbSe4 Prepared Using Mechanical Alloying and Hot Pressing

“…In the Cu 3 SbSe 4 system, Cu vacancies are easily formed due to the low formation energy and contribute to p -type behavior [ 25 ], which is often observed in other Cu chalcogenides [ 5 ]. Undoped Cu 3 SbSe 4 has been reported as an intrinsic semiconductor with a carrier concentration of ~10 18 cm −3 [ 5 , 6 , 7 , 26 ]. The carrier mobility values were 35–62 cm 2 V −1 s −1 , which decreased slightly with increasing HP temperature.…”

“…The electrical conductivities for all the specimens were (2.55–5.71) × 10 3 S m −1 at 323 K and (3.66–4.87) × 10 3 S m −1 at 623 K, indicating a low temperature dependence. Wei et al [ 6 ] obtained 4.7 × 10 3 S m −1 at 323 K and 9.5 × 10 3 S m −1 at 673 K, exhibiting non-degenerate semiconducting behavior, and Zhao et al [ 7 ] reported 2.3 × 10 3 S m −1 at 323 K and 6.3 × 10 3 S m −1 at 650 K.…”

“…Cu 3 SbSe 4 (permingeatite) exhibits a zinc-blende-type tetragonal structure with the space group I m. This compound is suitable as a p -type thermoelectric material at intermediate temperatures [ 4 ] because of its small band-gap energy (0.29–0.4 eV) and large carrier effective mass (≈1.1 m e ) [ 5 , 6 ]. In most studies, Cu 3 SbSe 4 compounds have been synthesized using a direct melting reaction of elements [ 7 , 8 , 9 ], but this method requires a low heating rate and long annealing time for homogenization. Mechanical alloying (MA) does not require the volatilization of chalcogen elements and maintains the homogeneity of the constituent elements [ 10 , 11 ].…”

Thermoelectric Properties of Doped-Cu3SbSe4 Compounds: A First-Principles Insight

“…. [16][17][18][19][25][26][27][28][29] with temperature. Both P-doped and As-doped Cu3SbSe4 compounds yield similar S values (S = 260 and 286 f/V/K, respectively, at 300 K), which are slightly lower than those calculated for Cu3SbSe4 and Cu3Sb1_^Bi;tSe4 (S « 338 fiV/K at 300 K).…”

Effects of Design Parameters on Fuel Economy and Output Power in an Automotive Thermoelectric Generator

“…In addition to the effects of the structural design, improvements in ATEG performance can also be obtained by adopting state-of-the-art electronic techniques to maximize power generation in transient behaviors (e.g., maximum power point tracking control [46]). Finally, the ongoing research into new thermoelectric materials is expected to substantially increase the actual values of figure of merit in commercial modules in future years [47,48]. Thus, it is interesting to provide a simple tool to determine the increment of the actual ZT e value in order to have positive fuel savings.…”