ZnO is widely studied for several applications such as a photocatalyst, a working electrode for dye-sensitized solar cells and for thermoelectric devices. This work studies the effect of an increase in the number of carriers by doping ZnO with Al and Ga. The 6.25 mol% of Al-doped ZnO, 6.25 mol% of Ga-doped ZnO, and 12.5 mol% of (Al, Ga) co-doped ZnO nanoparticles were prepared using combustion method. The prepared samples were then characterized by X-ray diffraction, transmission electron microscope, energy-dispersive X-ray spectroscopy and UV-visible spectroscopy techniques. Moreover, density functional theory (DFT) was also employed for computational studies of Al and Ga doped ZnO. Optimized structures, density of states (DOS) and band structures of these materials were calculated using Vienna Ab initio Simulation Package code. From this study, Al and Ga are found to play an important role in morphology and optical properties of the ZnO, changing the band gap and Fermi level of ZnO. Then, the prepared samples were characterised for their thermoelectric properties, and modelling of thermoelectric properties of ZnO, Al-doped ZnO, Ga-doped ZnO and (Al, Ga)-co doped ZnO was performed using BoltzTraP code. Furthermore, the Seebeck coefficient, electrical conductivity, relaxation time, electronic thermal conductivity and power factor were studied. The experimental and computational results are pointing in the same direction, that the thermoelectric properties of the ZnO are changed by doping: the semiconducting ZnO transforms into metallic ZnO when doped with Al and Ga. This leads to ZnO showing new thermoelectric properties, in particular the Ga-doped ZnO and (Al, Ga)-co doped ZnO: they provide high electrical conductivity and power factor. Therefore, it is expected that these good properties might promote the ZnO to be a potential candidate for applications, especially in high efficiency thermoelectric devices.