Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe₂/MoS₂ Heterostructures Using Wet-Transfer Stacking

Abstract

It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe2 film on high-resistance (HR) semiconducting MoS2 (>10 MΩ), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LR-PtSe2 (3 nm)/HR-MoS2 (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 μV/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR-2D heterostructure. The proposed stacked LR-PtSe2/HR-MoS2 heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.

First principle insights and experimental investigations of the electronic and optical properties of CuInS2 single crystals

“…In the ever-expanding family of three-dimensional materials, for photonic applications, notably in the field of flexible optoelectronics, those having semiconducting properties of transition metal dichalcogenides (TMDCs) are of particular interest in recent advances. The TMDCs are of great attention to researchers due to the variety of their structural and electrical characteristics, such as thermoelectric effect, 1,2 thermal study, 3–6 superconductivity, 7,8 optical study, 9,10 photovoltaic devices, 11,12 biological applications, 13–16 etc. Among the TMDCs, chalcopyrite-type semiconducting materials are being sought for their equally significant and environmentally benign nature, as well as prospective applications in a variety of optical instruments in the visible and near-infrared regions.…”