Enhanced Tunability of BaTixSn1−xO3 Films on Dielectric Substrate

Abstract

The structural properties of ferroelectric films of barium titanate-stannate on alumina substrates and the microwave characteristics of planar capacitive elements based on them are studied. It is established that the composition of the gas medium and the temperature of the substrate during the deposition of the film has a significant effect on the crystal structure, phase composition of the films and their electrical characteristics. Planar capacitors based on films subjected to high-temperature annealing after deposition exhibit 85% tunability at a frequency of 2 GHz, which is the best result for today.

Ultra-high resistive switching current ratio and improved ferroelectricity and dielectric tunability performance in a BaTiO3/La0.7Sr0.3MnO3heterostructure by inserting a SrCoO2.5layer

“…In general, the dielectric tunability of BaTiO 3 films can be modulated by doping them with Sr and Sn elements, transitioning from the normal ferroelectric state to the relaxed ferroelectric state. [1][2][3][4][5][6][7] However, it is difficult to achieve both high dielectric tunability and low loss for the Ba 1−x Sr x TiO 3 ferroelectric film using linear dielectrics. 8 Growing the multilayer is an effective method for enhancing dielectric properties.…”

Enhanced Tunable Properties of Strontium Barium Niobate Films on Dielectric Alumina Substrate at Microwaves

“…The reasons for the decrease in dielectric nonlinearity, deterioration of losses, and increase in leakage current of thin films may be a dead layer on the film-substrate interface [18], internal stresses in epitaxial films [19], and poor electrical conductivity of oxide-conducting electrodes [20]. To improve the electrical characteristics of FE films, high-temperature annealing of deposited films [21,22], strain engineering [23,24], and structuring of FE layers are used [25,26]. However, despite the fact that epitaxial FE films are confidently formed on structurally matched monocrystalline substrates such as MgO, SrTiO 3 , and LaAlO 3 , the best microwave characteristics, which have not been improved to date, have been demonstrated on polycrystalline films deposited by the magnetron sputtering technique [27,28].…”