Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

Liu, Xiaohui; Burton, John; Tsymbal, Evgeny Y.

doi:10.1103/physrevlett.116.197602

Cited by 57 publications

(39 citation statements)

References 25 publications

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“…Recently, Liu et al 46. have reported that, in addition to the Schottky barrier, the width of the ferroelectric barrier itself can also be modulated in SrRuO 3 /BTO/n-SrTiO 3 FTJs, where the BTO surface is metallized in the ON state, due to penetrated electrons from the accumulated n-type SrTiO 3 surface.…”

Section: Discussionmentioning

confidence: 99%

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

et al. 2017

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Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories.

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Section: Discussionmentioning

confidence: 99%

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

et al. 2017

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“…It is crucial but a challenge to fully understand the physics underlying these phenomena. It is noted that there has been a surge of first‐principles studies on these topics recently . Many of the interface issues involved in the MFTJ can be modeled and studied by first‐principles methods.…”

Section: Beyond Atomic 2d Semiconductorsmentioning

confidence: 99%

Prospects of spintronics based on 2D materials

Feng

Shen

Yang

et al. 2017

WIREs Comput Mol Sci

197

135

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Spintronics holds the promise for future information technologies. Devices based on manipulation of spin are most likely to replace the current silicon complementary metal‐oxide semiconductor devices that are based on manipulation of charge. The challenge is to identify or design materials that can be used to generate, detect, and manipulate spin. Since the successful isolation of graphene and other two‐dimensional (2D) materials, there has been a strong focus on spintronics based on 2D materials due to their attractive properties, and much progress has been made, both theoretically and experimentally. Here, we summarize recent developments in spintronics based on 2D materials. We focus mainly on materials of truly 2D nature, that is, atomic crystal layers such as graphene, phosphorene, monolayer transition metal dichalcogenides, and others, but also highlight current research foci in heterostructures or interfaces. In particular, we emphasize roles played by computation based on first‐principles methods which has contributed significantly in the designs of spintronic materials and devices. We also highlight challenges and suggest possible directions for further studies. WIREs Comput Mol Sci 2017, 7:e1313. doi: 10.1002/wcms.1313 This article is categorized under: Structure and Mechanism > Computational Materials Science Electronic Structure Theory > Ab Initio Electronic Structure Methods Electronic Structure Theory > Density Functional Theory

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“…This result is corroborated by density functional theory (DFT) calculations for a SrRuO 3 /BTO/n-SrTiO 3 FTJ, where n-doped SrTiO 3 (STO) serves as a semiconducting electrode. 43 When the polarisation is pointing away from n-STO, electron depletion and the associated band bending near the interface lead to an additional narrow barrier formed within the n-STO electrode (Figure 3d, blue curve and symbols). When the polarisation is pointing into n-STO, however, the Schottky barrier is eliminated by electron accumulation (Figure 3d, red curve and symbols).…”

Section: Mechanisms Of Ter and Their Experimental Manifestationmentioning

confidence: 99%

Predictive modelling of ferroelectric tunnel junctions

et al. 2016

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Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality. Switching the ferroelectric barrier polarisation direction produces a sizable change in resistance of the junction-a phenomenon known as the tunnelling electroresistance effect. From a fundamental perspective, ferroelectric tunnel junctions and their version with ferromagnetic electrodes, i.e., multiferroic tunnel junctions, are testbeds for studying the underlying mechanisms of tunnelling electroresistance as well as the interplay between electric and magnetic degrees of freedom and their effect on transport. From a practical perspective, ferroelectric tunnel junctions hold promise for disruptive device applications. In a very short time, they have traversed the path from basic model predictions to prototypes for novel non-volatile ferroelectric random access memories with non-destructive readout. This remarkable progress is to a large extent driven by a productive cycle of predictive modelling and innovative experimental effort. In this review article, we outline the development of the ferroelectric tunnel junction concept and the role of theoretical modelling in guiding experimental work. We discuss a wide range of physical phenomena that control the functional properties of ferroelectric tunnel junctions and summarise the state-of-the-art achievements in the field.Predictive modelling of FTJs JP Velev et al

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Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

Cited by 57 publications

References 25 publications

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Prospects of spintronics based on 2D materials

Predictive modelling of ferroelectric tunnel junctions

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