Enhanced ultraviolet to near-infrared absorption by two-tier structured silicon formed by simple chemical etching

Jiang, Jing; Li, Shibin; Jiang, Yadong; Wu, Zhiming; Xiao, Zhanfei; Su, Yuanjie

doi:10.1080/14786435.2012.705040

Cited by 6 publications

(4 citation statements)

References 21 publications

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“…The reflectance ( R ) and transmittance ( T ) were measured with an UV‐VIS‐NIR spectrophotometer equipped with an integrating sphere detector (PG2000‐Pro‐EX and NIR2500) from 0.25 to 2.5 µm. The absorptance ( A ) was calculated by formula: A = 1 −R−T . Hitachi S‐3400 scanning electron microscope (SEM) was used to characterize the surface morphologies of hyper‐doped silicon.…”

Section: Methodsmentioning

confidence: 99%

High near infrared absorption of hyper‐doped silicon induced by co‐doping of sulfur and nitrogen

Xuan

Zhang

Liu

et al. 2016

Physica Status Solidi (a)

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In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N 2 and SF 6 background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.

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Section: Methodsmentioning

confidence: 99%

High near infrared absorption of hyper‐doped silicon induced by co‐doping of sulfur and nitrogen

Xuan

Zhang

Liu

et al. 2016

Physica Status Solidi (a)

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“…Its unique optical and electronic properties indicate that the PS can be applied in optoelectronics, infrared detection, novel solar cells et al [1][2][3]. And benefiting from its high specific surface and high reactivity, the PS is also one kind of considerable material for gas sensors [4][5].…”

Section: Introductionmentioning

confidence: 99%

Pentacene Nano-Particles Film Modified Microstructure Silicon for NH₃ Gas Sensor Application

Liu

Jiang

Tai

et al. 2014

Integrated Ferroelectrics

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We reported on the development of pentacene nano-particles film modified microstructure silicon (MSS) for ammonia (NH 3 ) gas sensors. The MSS was fabricated by alkaline etching process, then pentacene film and interdigital electrodes were deposited on the MSS surface by vacuum evaporation. The surface morphologies of the MSS and pentacene film were characterized by scanning electron microscope (SEM). And the properties of the sensor were measured at room temperature. The SEM images showed the MSS exhibited a uniform hemisphere array, and pentacene nano-particles film was formed evenly on the MSS surface. The fabricated sensor showed reversible and favorable response to NH 3 .

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“…Although good absorption properties in the infrared were demonstrated, the high cost and complexity of this technique inhibits widespread adoption. More recently, less complex and cheaper techniques for increasing infrared absorption have been introduced based on chemical etching [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Wide-band ‘black silicon’ with atomic layer deposited NbN

et al. 2018

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Antireflection surfaces are often utilized in optical components to reduce undesired reflection and increase absorption. We report on black silicon (b-Si) with dramatically enhanced absorption over a broad wavelength range (250-2500 nm) achieved by applying a 10-15 nm conformal coating of NbN with atomic layer deposition (ALD). The improvement is especially pronounced in the near infrared (NIR) range of 1100-2500 nm where absorption is increased by >90%. A significant increase of absorption is also observed over the ultraviolet range of 200-400 nm. Preceding NbN deposition with a nanostructured ALD AlO (n-AlO) coating to enhance the NbN texture was also examined. Such texturing further improves absorption in the NIR, especially at longer wavelengths, strong absorption up to 4-5 μm wavelengths has been attested. For comparison, double side polished silicon and sapphire coated with 10 nm thick NbN exhibited absorption of only ∼55% in the NIR range of 1100-2500 nm. The results suggest a positive correlation between the surface area of NbN coating and optical absorption. Based on the wide-band absorption, the presented NbN-coated b-Si may be an attractive candidate for use in e.g. spectroscopic systems, infrared microbolometers.

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Enhanced ultraviolet to near-infrared absorption by two-tier structured silicon formed by simple chemical etching

Cited by 6 publications

References 21 publications

High near infrared absorption of hyper‐doped silicon induced by co‐doping of sulfur and nitrogen

High near infrared absorption of hyper‐doped silicon induced by co‐doping of sulfur and nitrogen

Pentacene Nano-Particles Film Modified Microstructure Silicon for NH₃ Gas Sensor Application

Wide-band ‘black silicon’ with atomic layer deposited NbN

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Enhanced ultraviolet to near-infrared absorption by two-tier structured silicon formed by simple chemical etching

Cited by 6 publications

References 21 publications

High near infrared absorption of hyper‐doped silicon induced by co‐doping of sulfur and nitrogen

High near infrared absorption of hyper‐doped silicon induced by co‐doping of sulfur and nitrogen

Pentacene Nano-Particles Film Modified Microstructure Silicon for NH3 Gas Sensor Application

Wide-band ‘black silicon’ with atomic layer deposited NbN

Contact Info

Product

Resources

About

Pentacene Nano-Particles Film Modified Microstructure Silicon for NH₃ Gas Sensor Application