Enhanced vertical polarization and ultra-low polarization switching barriers of two-dimensional SnS/SnSSe ferroelectric heterostructures

Abstract

Switching polarization via inter-layer sliding or heterostructural inversion in two-dimensional SnS/SnSSe ferroelectric heterostructures with enhanced vertical polarization and ultra-low switching barriers.

The giant tunneling electroresistance effect in monolayer In2SSeTe-based lateral ferroelectric tunnel junctions

“…The phase transition energy barriers of the polarization reversal processes are essential for the switching performance of ferroelectric devices. 69,70 The most effective polarization reversal pathway without an electric field is connecting the two degenerate states with different polarities. 26 Therefore, we calculated the phase transition process of the activation barrier against direct shifting of the central S layer using the climbing-image nudged elastic band (CINEB) method.…”

Recent advances in TMD interfaces with seamless contacts

“…Mo-based TMDs consist of Mo layers sandwiched between two chalcogen layers. 1,2 TMDs exist in different phases such as 2H and 1T 0 as shown in Fig. 1(a and b).…”

“…Two-dimensional (2D) transition metal dichalcogenides (TMDs) can have a wide range of compositions and dual phases of crystalline and electronic structures, giving these materials a wide range of interesting properties. [1][2][3][4][5][6][7][8][9][10][11][12] The number of layers has a significant influence on the physical properties of the materials as well as defining the electrical and optical structures of 2D quantum systems due to quantum confinement and interlayer interactions. Because of their various layered structures, such as hexagonal 2H polytype to semimetal (trigonal 1T 0 polytype) phases and distorted octahedral, the number of layers has a significant impact on the physical material characteristics.…”

Trends in energy and charge transfer in 2D and integrated perovskite heterostructures

“…It can function over a reasonably long distance (r) with a dependency that is proportional to 1/r 6 . [2][3][4] Several important optoelectronic applications, such as lasers, 5 photovoltaic cells, [6][7][8][9][10] LEDs, [11][12][13][14] and a Förster resonance energy transfer (FRET) have been extensively studied over the past three decades. These optoelectronic applications are well suited to the recently developed 2D vdW materials.…”