The giant tunneling electroresistance effect in monolayer In₂SSeTe-based lateral ferroelectric tunnel junctions

Abstract

Two-dimensional (2D) asymmetry Janus materials display in-plane and out-of-plane intrinsic ferroelectricity due to the asymmetrical structures, which makes them suitable for ferroelectric data storage devices. Herein, by performing density functional...

Magnetic-ferroelectric synergic control of multilevel conducting states in van der Waals multiferroic tunnel junctions towards in-memory computing

“…The polarization dependent tunneling current of the FTJ depends on the ferroelectric polarization direction of the potential barrier, resulting in the tunneling electroresistance (TER) effect. [15][16][17] MFTJs can be obtained by replacing the dielectric barrier of MTJs with a ferroelectric tunneling barrier, or by substituting the metal electrodes of FTJs with ferromagnetic materials. 18 The resistances of MFTJs can switch between different nonvolatile states under external electric or magnetic fields, which provides a new way to realize high-density data storage or in-memory computing.…”

“…The polarization dependent tunneling current of the FTJ depends on the ferroelectric polarization direction of the potential barrier, resulting in the tunneling electroresistance (TER) effect. 15–17…”

Electrodes as the protagonists in composite barrier Ferroelectric Tunnel Junctions

“…Recently, an Ag/PbZr 0.52 Ti 0.48 O 3 /Nb: SrTiO 3 FTJ was designed with good endurance and ultralow write energy consumption for neuron-inspired computing [32]. A Giant TER of order 10 8 % was reported in a monolayer In 2 SSeTe-based FTJS with Graphene and Germanene electrodes using density functional calculations [33]. In-plane FTJs consisting of an α-In 2 Se 3 ferroelectric and a hexagonal IV-VI semiconductor exhibit two regimes, tunneling and metallic, for OFF and ON states with giant TER of order ∼10 4 [34].…”