Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror

Zhao, Chongchong; Yang, Xiaokun; Wei, Bin; Liu, Jie; Chen, Rongrong; Luan, Caìna; Xiao, Hongdi

doi:10.1016/j.vacuum.2020.109669

Cited by 10 publications

(1 citation statement)

References 30 publications

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“…In addition, The MQWs grown on planar InGaN-on-GaN exhibited a peak PL intensity 5 times lower than MQW grown on tiles. The decrease in emission intensity from the MQWs grown on planar InGaN may be related to defect formation due to partial plastic relaxation of the planar InGaN on GaN films [52][53][54] . However, to determine the reason is beyond the scope of this manuscript.…”

Section: Sample Namementioning

confidence: 99%

Demonstration of 82% relaxed In_0.18G_a0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

Khan,

Wurm,

Collins

et al. 2023

Phys. Scr.

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In this study, the impact of InGaN film thickness and different compositionally graded structures on InGaN relaxation grown on tiled GaN-on-porous-GaN pseudo substrates (PSs) were studied. In addition, the impact of the degree of porosification on the In incorporation and relaxation of InGaN were examined. 82% relaxed 1μm thick In0.18Ga0.82N, which is equivalent to a fully relaxed In-composition of 15%, on porous GaN PS was obtained. Additionally, multi-quantum wells (MQWs) grown on the MBE InGaN-on-porous GaN base layers by MOCVD showed ∼85 nm redshift in comparison with MQWs grown on planar GaN. The developed InGaN-on-porous-GaN PSs can provide an alternative route to grow MQW with a high In content which is essential for high-efficiency nitride-based red LEDs.

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Section: Sample Namementioning

confidence: 99%

Demonstration of 82% relaxed In_0.18G_a0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

Khan,

Wurm,

Collins

et al. 2023

Phys. Scr.

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Effect of annealing time on the microstructure, crystal quality and optoelectronic properties of Er-Ga2O3 films

Wang

Zhang

Yang

et al. 2023

J Mater Sci: Mater Electron

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Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

Liu

Yang

Chen

et al. 2022

Journal of Alloys and Compounds

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Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror

Cited by 10 publications

References 30 publications

Demonstration of 82% relaxed In_0.18G_a0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

Demonstration of 82% relaxed In_0.18G_a0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

Effect of annealing time on the microstructure, crystal quality and optoelectronic properties of Er-Ga2O3 films

Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

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Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror

Cited by 10 publications

References 30 publications

Demonstration of 82% relaxed In0.18Ga0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

Demonstration of 82% relaxed In0.18Ga0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

Effect of annealing time on the microstructure, crystal quality and optoelectronic properties of Er-Ga2O3 films

Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

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Demonstration of 82% relaxed In_0.18G_a0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

Demonstration of 82% relaxed In_0.18G_a0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy