2022
DOI: 10.1016/j.jallcom.2021.162069
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Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

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Cited by 5 publications
(2 citation statements)
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“…W. J. Tseng also prepared GaN nanopores and observed similar enhancements in water splitting performance [49]. Increased surface areas have been shown to enhance light absorption effectively [50][51][52][53]. Additionally, reduced sidewalls shorten the migration distance of photo-generated carriers to the GaN/solution interface, reducing the chance of electron-hole recombination [54,55].…”
Section: Introductionmentioning
confidence: 78%
“…W. J. Tseng also prepared GaN nanopores and observed similar enhancements in water splitting performance [49]. Increased surface areas have been shown to enhance light absorption effectively [50][51][52][53]. Additionally, reduced sidewalls shorten the migration distance of photo-generated carriers to the GaN/solution interface, reducing the chance of electron-hole recombination [54,55].…”
Section: Introductionmentioning
confidence: 78%
“…Lu 2 O 3 single crystal as sesquioxide has proven to be prospective for high-power solid-state lasers, high-energy radiation detection, and semiconductors due to its high thermal conductivity, low phonon energy, high-density scintillators, high absorption efficiency, wide band gap, and robust thermal stability [1][2][3][4][5][6][7]. Polishing, as the terminal process of traditional ultra-precision machining, can achieve high surface flatness and roughness, but inevitably produces surface and subsurface damage.…”
Section: Introductionmentioning
confidence: 99%