1999
DOI: 10.1016/s0921-4534(98)00682-0
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Enhancement in Tc of superconducting BPSCCO thick films due to irradiation of energetic argon ions of dense plasma focus

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Cited by 24 publications
(18 citation statements)
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“…In the case of an intermediate superconducting state for a circular conductor of radius r 0 , we have (1) where R is the impedance of the conductor containing the interior cylindrical region of radius r 1 in the inter mediate superconducting layer, R n is the impedance of the normal metal in the tube with r 1 < r < r 0 , J is the current density, and J c is the critical current density. (1), there is a jump from 0 to R n /2, whose value gradually approaches R n as the current density increases, J > J c .…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…In the case of an intermediate superconducting state for a circular conductor of radius r 0 , we have (1) where R is the impedance of the conductor containing the interior cylindrical region of radius r 1 in the inter mediate superconducting layer, R n is the impedance of the normal metal in the tube with r 1 < r < r 0 , J is the current density, and J c is the critical current density. (1), there is a jump from 0 to R n /2, whose value gradually approaches R n as the current density increases, J > J c .…”
Section: Methodsmentioning
confidence: 99%
“…For the first time, information on an increase in the critical temperature by 15 K caused by plasma shock of films consisting of the mixture of the 2212 and 2223 phases was published in [1]. Later, the possibility of increasing the critical current in a magnetic field owing to plasma generated shock waves (SWs) was shown in [2,3].…”
Section: Introductionmentioning
confidence: 99%
“…This device is low cost and is able to deposit wide range of materials on different substrates at room temperature. It has been used in earlier research works for introducing phase change in materials [13][14][15][16][17] and for preparation of thin films [18][19][20][21]. More recently, the DPF device is used for deposition of nanoparticles of different materials [3][4].…”
Section: Introductionmentioning
confidence: 99%
“…It was a general misconception that high density high temperature and strongly non equilibrium fusion plasmas are not suitable for material processing and deposition of nanoparticles and nanostructured materials. Recently, Srivastava and his research group had established in the series of the papers that high density high temperature plasma of DPF device similar to fusion plasma can be used for introducing phase changes [6][7][8][9][10], preparation of thin film [11][12][13][14][15][16] and nanoparticles [17][18]. It is found that this type of plasma is suitable for fabrication of nanoparticles and nanostructured materials.…”
Section: Introductionmentioning
confidence: 99%