Enhancement-Mode Ga<sub>2</sub>O<sub>3</sub> Vertical Transistors With Breakdown Voltage &gt;1 kV

Hu, Zongyang; Nomoto, Kazuki; Li, Wenshen; Tanen, Nicholas; Sasaki, Kohei; Kuramata, Akito; Nakamura, Tohru; Jena, Debdeep; Xing, Huili Grace

doi:10.1109/led.2018.2830184

Cited by 272 publications

(140 citation statements)

References 22 publications

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“…7 Recently, this high theoretical performance has been supported experimentally by diode and transistor device fabrication. 8,9 Most importantly, high-quality Ga 2 O 3 wafers can be fabricated using simple melt-based crystal growth processes akin to those used for fabrication of inexpensive Si or sapphire (Al 2 O 3 ) crystals. 7 However, a quantitative estimate of the cost benefits of the Ga 2 O 3 wafer fabrication process at scale is missing from published literature.…”

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confidence: 99%

How Much Will Gallium Oxide Power Electronics Cost?

Reese

Remo

Green

et al. 2019

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122

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confidence: 99%

How Much Will Gallium Oxide Power Electronics Cost?

Reese

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Green

et al. 2019

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“…Vertical geometry, large area planar devices can produce large total forward currents, while maintaining adequate reverse breakdown. [45][46][47][48][49][50][51][52][53][54][55][56][57][58] This is a stringent test of material quality, since large diodes increase the probability of incorporating defects into the active region, degrading reverse breakdown voltage. 37,39,43,45 Lateral devices can achieve high breakdown voltage using large contact separations, but cannot simultaneously achieve high forward current due to the low total conduction thickness.…”

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Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers

Yang

Fares

Elhassani

et al. 2019

ECS J. Solid State Sci. Technol.

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There is interest in developing large area Ga 2 O 3 rectifiers for applications in hybrid power converters. Vertical geometry, Schottky rectifiers with area 1.2 × 1.2 mm 2 fabricated on thick (8μm), undoped (n = 4.4 × 10 15 cm −3) β-Ga 2 O 3 epitaxial layers oN conducting bulk substrates exhibit both high forward current (1A in pulsed mode) and reverse breakdown voltage (V B = 760V). This breakdown voltage was ∼200V higher than rectifiers without the presence of a bilayer SiO 2 / SiN x field plate. This edge termination is critical for obtaining high breakdown voltage by reducing electric field crowding around the metal contact periphery. Optimization of the field plate design is still needed, since devices are observed experimentally to breakdown at the contact periphery. When purposely driven to failure at high reverse bias, pits are observed in the high field regions at the edge of the contact. The specific on-resistance (R on) for these large area rectifiers was 22 m .cm −2 , with a figure-of-merit V B 2 /Ron of 26 MW.cm −2. The potential of Ga 2 O 3 for power electronics is clear when it is realized that these values are still an order of magnitude lower than theoretical values. The diode on-off ratio was in the range 2.7 × 10 7-2.2 × 10 9 when switching from +1.5V forward bias to 1-100V reverse bias.

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“…The availability of high-quality large area and low cost wafers, [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] especially those grown by the edgedefined film-fed growth (EFG) method 6 in combination with these attractive properties have potentially positioned β-Ga 2 O 3 to supplement the more established wide bandgap semiconductors, SiC and GaN, in compact, high power density converters for power switching applications. 3,4,7,8,11,12 In addition to the progress in bulk growth, there is now the capability to grow high quality epilayers with controlled net free-electron concentrations in the range 10 15 -10 19 cm −3 using shallow Si, Ge, and Sn donors. 1,5,9,10,14,15 In Molecular Beam Epitaxy, Sn and Ge are typically employed for n-type doping.…”

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Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃

Tadjer

Fares

Mahadik

et al. 2019

ECS J. Solid State Sci. Technol.

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The commonly used n-type dopants, Si and Sn, were implanted into bulk (−201) β-Ga 2 O 3 over a 2 order of magnitude dose range and annealed at temperatures from 1000-1150°C. The original lattice parameters were restored by annealing at 1150°C for the highest dose Si implants, while only partial recovery was observed in Sn implanted samples. The Sn implanted samples had overall lower lattice parameters compared to the Si implanted samples, indicating that Sn generates tensile strain in the Ga 2 O 3 lattice. The rocking curve FWHM was observed to increase with the annealing process, indicating that the annealing process does not improve the crystal quality. Transmission electron microscopy showed removal of the end-of-range lattice damage after 1150°C anneals of the heaviest implanted species, Sn. Cathodoluminescence at 5K showed recovery of intensity of the common UV band around 3.2 eV after annealing. Secondary Ion Mass Spectrometry profiling showed the presence of concentration-dependent diffusion of both Si and Sn, with values for diffusivity at 1150°C of 9.5 × 10 −13 cm.s −1 for Si and 1.7 × 10 −13 cm.s −1 for Sn obtained by fitting through the FLOOPS simulation package.

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Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV

Cited by 272 publications

References 22 publications

How Much Will Gallium Oxide Power Electronics Cost?

How Much Will Gallium Oxide Power Electronics Cost?

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃

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Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

Cited by 272 publications

References 22 publications

How Much Will Gallium Oxide Power Electronics Cost?

How Much Will Gallium Oxide Power Electronics Cost?

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3

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Product

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Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃