Enhancement-mode GaAs MESFET technology for low consumption power and low noise applications

Abstract

Ion-implanted enhancement-mode GqAs MESFET's with an advanced Lightly Doped Drain (LDD) structure have been developed for low cost, low consumption power, and low noise applications. The advanced LDD structure, which consists of step graded (n+, n', n') sourcddrain implanted regions and surrounding players located within the n+-layers, is effective to suppress the short channel effects and reduce sourcddrain parasitic resistance without increasing the parasitic capacitance. A manufacturable self-aligned process based on a dummy gate has also been developed for the fabrication of this structure. The 0.3 pm devices show a noise figure of less than 1 dB with an associated gain of higher than 9 dB at 6 GHz, even at 1 mW operation. Furthermore, standard deviations of noise figure and associated gain are as small as 0.05 dB (at an average of 0.83 dB) and 0.32 dB (at an average of 8.82 dB), respectively, under a 1 mW operation over a 3"@ wafer.

A high efficiency complementary GaAs power FET technology for single supply portable applications

“…The importance of this is illustrated by the recent increase in papers on single supply devices and amplifiers [l] [2]. This paper reports on CGaAs N-type FET's that were fabricated in Motorola's CS-1 fabrication facility.…”