Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

Karmalkar, Shreepad; Mishra, Umesh K.

doi:10.1109/16.936500

Cited by 378 publications

(211 citation statements)

References 11 publications

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“…8(a) -(d) indicate the electron concentrations after the occurrence of breakdown leakage currents and each biases are displayed in inset of figures. With the aforementioned off-state breakdown characteristics, introduction of a proper passivation layer such as either AlN thin film [26,27] or field plate [28,29] enhances the robustness against the breakdown.…”

Section: Fig 1 (A) Three-dimensional Schematic View and (B)mentioning

confidence: 99%

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Kim¹,

Seo²,

Yoon³

et al. 2015

Journal of Electrical Engineering and Technology

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-Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.

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Section: Fig 1 (A) Three-dimensional Schematic View and (B)mentioning

confidence: 99%

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Kim¹,

Seo²,

Yoon³

et al. 2015

Journal of Electrical Engineering and Technology

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“…This is considered due to a decrease in surface-state effects. It is well recognized that the field plate can improve the breakdown voltage and the power performance, because the electric field at the drain edge of the gate is reduced (Karmalkar & Mishra, 2001;Ando et al, 2003;Xing et al, 2004;Saito et al, 2005;Pala et al, 2008). However, it is not well understood whether the field plate affects buffer-related lag phenomena and current collapse.…”

Section: Introductionmentioning

confidence: 99%

“…The thickness of SiN layer d is varied as a parameter between 0 and 0.1 μm. Polarization charges of 10 13 cm -2 are set at the heterojunction interface, and the surface polarization charges are assumed to be compensated by surface-state charges, as in (Karmalkar & Mishra, 2001). As a model for the buffer layer, we use a three level compensation model which includes a shallow donor, a deep donor and a deep acceptor (Horio et al, 2005).…”

Section: Introductionmentioning

confidence: 99%

Analysis of Parasitic Effects in AIGaN/GaN HEMTs

Horio¹

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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This book is planned to publish with an objective to provide a state-of-the-art reference book in the areas of advanced microwave, MM-Wave and THz devices, antennas and systemtechnologies for microwave communication engineers, Scientists and post-graduate students of electrical and electronics engineering, applied physicists. This reference book is a collection of 30 Chapters characterized in 3 parts: Advanced Microwave and MM-wave devices, integrated microwave and MM-wave circuits and Antennas and advanced microwave computer techniques, focusing on simulation, theories and applications. This book provides a comprehensive overview of the components and devices used in microwave and MM-Wave circuits, including microwave transmission lines, resonators, filters, ferrite devices, solid state devices, transistor oscillators and amplifiers, directional couplers, microstripeline components, microwave detectors, mixers, converters and harmonic generators, and microwave solid-state switches, phase shifters and attenuators. Several applications area also discusses here, like consumer, industrial, biomedical, and chemical applications of microwave technology. It also covers microwave instrumentation and measurement, thermodynamics, and applications in navigation and radio communication. How to referenceIn order to correctly reference this scholarly work, feel free to copy and paste the following: 978-953-307-031-5, InTech, Available from: http://www.intechopen.com/books/advanced-microwave-andmillimeter-wave-technologies-semiconductor-devices-circuits-and-systems/analysis-of-parasitic-effects-inaigan-gan-hemts

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“…A possible solution is through the use of metal field plates to shape the potential, 18 an idea originally proposed in the context of silicon planar diodes. 19 The field plate (FP) can reduce the maximum electric field by offering an additional surface for termination of the field lines (effectively spreading the electric field over a longer gate-to-drain spacing), and hence lower the electrical field crowding at the drain-side of the gate edge.…”

Section: Introductionmentioning

confidence: 99%

Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

2015

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The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

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Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

Cited by 378 publications

References 11 publications

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Analysis of Parasitic Effects in AIGaN/GaN HEMTs

Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

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