1999
DOI: 10.1063/1.124443
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Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor

Abstract: Articles you may be interested inSingle-electron transistors based on self-assembled silicon-on-insulator quantum dots Appl. Phys. Lett. 96, 142108 (2010); 10.1063/1.3383235 Isolated double quantum dot capacitively coupled to a single quantum dot single-electron transistor in silicon A dual-gate-controlled single-electron transistor with coupled dot geometry has been fabricated on a silicon-on-insulator structure. Coupled dots are defined by tunable gates which are designed to separately control the tunneling … Show more

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Cited by 12 publications
(2 citation statements)
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“…In applying Si SET devices to new functional devices such as quantum cellular automata (QCA) [8], [9] and photoimaging devices [10], it is necessary to develop the SET/SHT devices composed of a two-dimensional (2-D) array of Si dots. So far, most of the Si-based SET devices utilize single dot or one-dimensional (1-D) dot array [1], [11], [12], while only one paper has been reported [13] on the transport properties in the 2-D Si dots, to our knowledge. In [13], 2-D multidots composed of an undulated ultrathin silicon-on-insulator layer were formed using anisotropic wet etching in an alkaline-based solution.…”
Section: Introductionmentioning
confidence: 99%
“…In applying Si SET devices to new functional devices such as quantum cellular automata (QCA) [8], [9] and photoimaging devices [10], it is necessary to develop the SET/SHT devices composed of a two-dimensional (2-D) array of Si dots. So far, most of the Si-based SET devices utilize single dot or one-dimensional (1-D) dot array [1], [11], [12], while only one paper has been reported [13] on the transport properties in the 2-D Si dots, to our knowledge. In [13], 2-D multidots composed of an undulated ultrathin silicon-on-insulator layer were formed using anisotropic wet etching in an alkaline-based solution.…”
Section: Introductionmentioning
confidence: 99%
“…1,2 The advances in current progress in microfabrication technology have enabled studies of transport through quantum systems in which the charge carriers behave coherently. In recent years, much effort has been devoted to coherent transport in various coupled quantum-dot-and quantum-wire-associated structures such as open quantum dot, 3-7 embedded dot, [8][9][10] sidecoupled dot, [11][12][13][14][15] antidot, [16][17][18] multidot, 19,20 and coupled quantum-wire systems. [21][22][23] Rich quantum interference phenomena in mesoscopic systems have been discussed in various aspects such as bound-state features, [24][25][26][27][28] spin-related switching, [29][30][31] phase switching, 32,33 and Andreev current switching.…”
Section: Introductionmentioning
confidence: 99%