Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor

Abstract

We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.

Silicon Single Electron Transistors Operating at Room Temperature and Their Applications

“…Note that this current staircase is not the classical Coulomb staircase, but the staircase where each plateau corresponds to a different quantum state in the dot. This type of current staircase is also reported in Lee et al (2000).…”

Terahertz ultra-fast single-electron transistors fabricated on silicon-on-insulator structures by pattern-dependent oxidation

“…This is a remarkable observation since it yields the junction resistance of the SET to be ∼260 k , which is just one order higher than a theoretical quantum limit for displaying a clear Coulomb blockade with a PVCR 1000. It is noted that for most of the SET devices reported so far, the drain conductances with very large PVCR were measured to be of the order of 1-100 nS level [4][5][6][7]. The typical value of the gate capacitance C g is deduced from the Coulomb peak spacing V g using the relationship C g = e/ V g , which yields C g ∼ 1.2 aF.…”

Transporte quântico em spintrônica: corrente e shot noise via funções de Green de não equilíbrio.

“…Se, por exemplo, os níveis degenerados em spin forem E 1 , E 2 , E 3 ,..., os vários picos apareceriam em E 1 , E 1 + U , E 2 + 2U , E 2 + 3U , ... [17]. Esses vários picos na curva I × V g podem ser vistos, por exemplo, em [2] e [18].…”

“…Lee et al [18] observaram, em um sistema de ponto quântico, oscilações na corrente como função da tensão de porta, provocadas pelo bloqueio de Coulomb. Seguimos vendo como a eletrônica dependente de spin surge dentro desse contexto.…”