2014
DOI: 10.1016/j.snb.2013.10.102
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Enhancement of detection by selective modification of silicon nanobelt field-effect transistors via localized Joule heating

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Cited by 9 publications
(16 citation statements)
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“…1 shows a simple planar device geometry akin to a single-gate MOSFET, a plethora of device geometries have been developed such as nanogap, [22][23][24] nanobelt, 25,26 nanoribbon 18,27-32 and nanowire 15,29,[33][34][35][36][37]38 structures. The application of additional lateral gates has been shown useful in tuning the carrier concentration of the device and pursuit of an optimal gate configuration is an active area of research.…”
Section: Operation Of Field-effect Sensorsmentioning
confidence: 99%
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“…1 shows a simple planar device geometry akin to a single-gate MOSFET, a plethora of device geometries have been developed such as nanogap, [22][23][24] nanobelt, 25,26 nanoribbon 18,27-32 and nanowire 15,29,[33][34][35][36][37]38 structures. The application of additional lateral gates has been shown useful in tuning the carrier concentration of the device and pursuit of an optimal gate configuration is an active area of research.…”
Section: Operation Of Field-effect Sensorsmentioning
confidence: 99%
“…26,28,32,36,49,51,107,120,[160][161][162][163][164][165][166] The simplest model for biomolecule-binding reactions, is the first-order Langmuir model of surface-reactions (details in ESI section 10 †). In this model the surface reaction of analyte (A) to the surface sites (S) is treated simply:…”
Section: Surface Binding Reactionsmentioning
confidence: 99%
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