Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure
Abstract:The electrical characteristics of NAND flash memories with an asymmetric interpoly-dielectric (IPD) structure and a conventional IPD structure were simulated by using a technology computer-aided sentaurus simulation tool to enhance their device performance. The floating gate potential and the on-current level of the NAND memory devices with an asymmetric IPD structure were higher than those with a conventional IPD structure. The maximum electric field formed at the rounding boundary area of the floating gate a… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.