2014
DOI: 10.7567/jjap.53.064306
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Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure

Abstract: The electrical characteristics of NAND flash memories with an asymmetric interpoly-dielectric (IPD) structure and a conventional IPD structure were simulated by using a technology computer-aided sentaurus simulation tool to enhance their device performance. The floating gate potential and the on-current level of the NAND memory devices with an asymmetric IPD structure were higher than those with a conventional IPD structure. The maximum electric field formed at the rounding boundary area of the floating gate a… Show more

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