Enhancement of electrical performance of ZnSe thin films via Au nanosandwiching

Qasrawi, A.F.; Taleb, M.

doi:10.2478/msp-2020-0009

Cited by 14 publications

(18 citation statements)

References 19 publications

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“…The dynamics of this complicated system should also depend on other factors like effective masses, drift mobility's and defects concentrations. [ 5,18 ] Compared with our earlier investigations on Yb/ZnSe/Au interfaces, [ 5 ] the stacking of Au/ZnSe with GeO 2 decreased the density of states localized near the Fermi level from 1.10

\times 10^{19} {cm}^{- 3} {eV}^{- 1}

7.90 \times 10^{18} {cm}^{- 3} {eV}^{- 1}

. The QMT conduction is dominant below 0.150 GHz in Yb/ZnSe/Au while its dominant below 0.58 GHz in Au/ZnSe/GeO 2 films.…”

Section: Resultsmentioning

confidence: 73%

“…However, no remarkable contribution of GeO 2 to the low‐frequency conductivity (

σ_{normalL}

) values is observed, the high‐frequency conductivity (

σ_{normalH}

) decreased by three orders magnitude after interfacing of Au/ZnSe with GeO 2 in place of metallic Yb. [ 5 ]…”

Section: Resultsmentioning

confidence: 99%

“…Inserting Au nanoslabs between layers of ZnSe shifted the notch frequency to 1.30 GHz. [ 5 ] However, the reported reflection coefficient values for the ZnSe/Au/ZnSe samples [ 5 ] are still far from reaching ideality of bandpass/stop filters. The Au/ZnSe/GeO 2 /C band filters are also comparable with the wide band antenna operating in the frequency band of 0.20–3.0 GHz.…”

Section: Resultsmentioning

confidence: 99%

“…In one of our previous investigations, [ 5 ] we have proved that the insertion of 70 nm‐thick Au nanoslabs between layers of ZnSe could increase the alternating current conductivity of ZnSe by three orders of magnitude. Compared with glass/ZnSe, the Au/ZnSe interfaces are observed to be more appropriate for electric device fabrication.…”

Section: Introductionmentioning

confidence: 83%

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Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Algarni

Qasrawi

Khusayfan

2021

Physica Status Solidi (a)

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Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as bandstop filters. The stacked layers of Au/ZnSe/GeO2 are coated under pressure of 10−5 mbar. The device is characterized by X‐ray diffraction, X‐ray photoelectron, X‐ray fluorescence, and impedance spectroscopy techniques. It is observed that when the device is contacted with carbon point contacts, it exhibits resonance–antiresonance phenomena near 1.0 GHz. The Au/ZnSe/GeO2/C devices display negative capacitance effect in the frequency domain of 0.96–1.80 GHz. Analyses of the conductivity and capacitance spectra in the frequency domain of 0.01–1.80 GHz reveal the domination of conduction by quantum mechanical tunneling below 0.58 GHz and by the correlated barriers hopping above 0.58 GHz. In addition, characterizations of the impedance, reflection coefficient, return loss (Lnormalr) and voltage standing wave ratios (VSWRs) spectra of the device indicated ideal bandstop filter features. The notch frequency of the filter is 1.56 GHz. At this critical frequency, the Au/ZnSe/GeO2/C devices display ideal characteristics presented by VSWR of 1.0, Lnormalr value of 28.9 dB. These features make the Au/ZnSe/GeO2/C heterojunction devices promising for use in telecommunication technology.

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\times 10^{19} {cm}^{- 3} {eV}^{- 1}

7.90 \times 10^{18} {cm}^{- 3} {eV}^{- 1}

. The QMT conduction is dominant below 0.150 GHz in Yb/ZnSe/Au while its dominant below 0.58 GHz in Au/ZnSe/GeO 2 films.…”

Section: Resultsmentioning

confidence: 73%

“…However, no remarkable contribution of GeO 2 to the low‐frequency conductivity (

σ_{normalL}

) values is observed, the high‐frequency conductivity (

σ_{normalH}

) decreased by three orders magnitude after interfacing of Au/ZnSe with GeO 2 in place of metallic Yb. [ 5 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 83%

See 2 more Smart Citations

Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Algarni

Qasrawi

Khusayfan

2021

Physica Status Solidi (a)

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“…The same condition are also valid for YbSe. The ionic radius of Au +3 is ≈82 pm, [ 14 ] Au +1 is 137 pm [ 15 ] and Yb +3 is 101 pm. [ 16 ] The ionic radii are larger than that of Cu +2 (57 pm [ 17 ] ) indicating that Au and Yb ions can be substituted interstitially in CuSe resulting in increased defect density values.…”

Section: Resultsmentioning

confidence: 99%

Au Nanosheets‐Assisted Structural Phase Transitions, In Situ Monitoring of the Enhanced Crystallinity, and Their Effect on the Optical and Dielectric Properties of CuSe/Au/CuSe Thin Films

Qasrawi

Baniowdah

Samen

2022

Crystal Research and Technology

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Herein, stacked layers of copper selenide thin films comprising Au nanosheets in its structure are fabricated and characterized. The CuSe/Au/CuSe (CAC) thin films are prepared by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. It is shown that Au nanosheets improve the stoichiometric growth of the CuSe thin films and induce the structural phase transitions from cubic to hexagonal. In addition, the in situ monitoring of the structural modifications in the CAC in the temperature range of 293–473 K proves the permanent enhanced crystallinity of the films. Optically, while the Au nanosheets increase the light absorbability and redshifts the energy band gap of CuSe, the in situ heating blueshifts the energy band gap. Moreover, insertion of Au nanosheets between layers of CuSe and heating them at 473 K significantly increase the dielectric constant and the optical conductivity by more than five times. Moreover, the drift mobility of charged carriers, the scattering time at femtosecond level, and the plasmon frequency are remarkably enhanced. Values of plasmon frequency exceed 6.0 GHz nominating the CAC films as signal receivers suitable for 5G technology.

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Investigation of Charge Transfer Mechanism and Dielectric Relaxation in CsCdCl₃ Perovskite

Chakchouk,

Almalawi,

Smaili

et al. 2024

Applied Organom Chemis

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The exceptional optoelectronic capabilities of all‐inorganic metal halide perovskite semiconductor components open up a multitude of possible applications. Among all the metal halides, the chloride of cesium cadmium has not been investigated in great detail. Here, we describe a straightforward method for creating CsCdCl3 perovskite single crystals using the slow evaporation solution growth approach. These were investigated by utilizing X‐ray powder diffraction, and optical and impedance spectroscopies. The creation of a single‐phase with a hexagonal‐type structure was verified by the X‐ray powder diffraction (XRPD) data. The compound's semiconductor characteristics were verified by the optical measurement, indicating a direct band‐gap value of about 3.16 eV. The absorption and reflectance spectrum was also used to calculate and explain the optical extinction coefficient, Urbach energy, and skin depth as functions of the input photon's wavelength. Besides, the impedance spectroscopy technique was employed to investigate the characteristics of this component, across a frequency range of 10−1 Hz to 106 Hz and at temperatures ranging from 313 K to 453 K. The frequency behavior of the AC conductivity, σac, was analyzed using the universal Jonscher law. The outcomes of the charge transport investigation on CsCdCl3 imply that the perovskite material possessed a quantum mechanical tunneling (QMT) model for T < 363 K and a large polaron tunneling (OLPT) paradigm for T > 363 K. A correlation between the ionic conductivity and the crystal structure was established and discussed. Ultimately, the low dielectric loss and high dielectric constant of CsCdCl3 make it a promising material for energy harvesting devices.

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Enhancement of electrical performance of ZnSe thin films via Au nanosandwiching

Cited by 14 publications

References 19 publications

Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Au Nanosheets‐Assisted Structural Phase Transitions, In Situ Monitoring of the Enhanced Crystallinity, and Their Effect on the Optical and Dielectric Properties of CuSe/Au/CuSe Thin Films

Investigation of Charge Transfer Mechanism and Dielectric Relaxation in CsCdCl₃ Perovskite

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Enhancement of electrical performance of ZnSe thin films via Au nanosandwiching

Cited by 14 publications

References 19 publications

Design and Characterization of ZnSe/GeO2 Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Design and Characterization of ZnSe/GeO2 Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Au Nanosheets‐Assisted Structural Phase Transitions, In Situ Monitoring of the Enhanced Crystallinity, and Their Effect on the Optical and Dielectric Properties of CuSe/Au/CuSe Thin Films

Investigation of Charge Transfer Mechanism and Dielectric Relaxation in CsCdCl3 Perovskite

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Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Investigation of Charge Transfer Mechanism and Dielectric Relaxation in CsCdCl₃ Perovskite